2014
DOI: 10.1016/j.microrel.2014.02.018
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On the crack and delamination risk optimization of a Si-interposer for LED packaging

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Cited by 8 publications
(2 citation statements)
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“…18, right). Suitable dimension of the vias were calculated in advance [17]. The substrate wafer contains a large electrical isolated thermal pad on the bottom side and four die bond positions on the top.…”
Section: Processingmentioning
confidence: 99%
“…18, right). Suitable dimension of the vias were calculated in advance [17]. The substrate wafer contains a large electrical isolated thermal pad on the bottom side and four die bond positions on the top.…”
Section: Processingmentioning
confidence: 99%
“…Given that chip-stacking packages, combined with either silicon-based or glass/ceramic-based interposers, are promising frameworks [ 1 , 2 , 3 , 4 , 5 ] for three-dimensional integrated circuit (3D-IC) integrations [ 6 , 7 , 8 ], microbump (μ-bump) reliability must be enhanced. Processes, such as chip grinding, position adjustment and planarity of assembly, the formation of through-silicon via (TSV), and the composition and dimensions of μ-bumps, should be emphasized to improve the functionality of 3D-IC packages.…”
Section: Introductionmentioning
confidence: 99%