On THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

Buchanan, D. A.; Felnhofer, D.

doi:10.1007/1-4020-4367-8_4

Cited by 9 publications

(5 citation statements)

References 36 publications

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“…The observed large shift reveals positive oxide charge build-up during the stress rather than detrapping as suggested above. The density and the centroid of this charge can be determined by using the following equations [37]:…”

Section: Dependence On the Stressing Time Figuresmentioning

confidence: 99%

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode

Atanassova

Stojadinović

Paskaleva

et al. 2008

Semicond. Sci. Technol.

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Response of 8 nm Ta 2 O 5 stacks with different gates (Al, W and Au) to voltage stress at gate injection is studied by probing under various voltage/time conditions at room temperature and at 100 • C. A stress-induced leakage current (SILC) is detected in all samples and reveals gate dependence. It is established that the pre-existing traps actually govern this response, and the impact of gate-induced defects is stronger. The Au-gated devices are the most susceptible to the stress degradation. Two processes-electron trapping at pre-existing traps and positive charge build-up-are suggested to be responsible for generation of SILC. It is concluded that despite some gate effects, the origin of CVS degradation in this particular high-k dielectric is different from that in SiO 2 .

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Section: Dependence On the Stressing Time Figuresmentioning

confidence: 99%

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode

Atanassova

Stojadinović

Paskaleva

et al. 2008

Semicond. Sci. Technol.

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“…As a result, the presence of oxygen defects in high-k metal oxide films is typically inferred from electrical measurements. Although highly sensitive, the results of capacitance and current measurements undertaken to measure point defect concentrations, and their spatial and energy distributions are difficult to interpret unambiguously (10).…”

Section: Oxygen Stoichiometry Evolution In Hfo 2 Filmsmentioning

confidence: 99%

“…the resulting mass action equation will relate [O i ] to the interface fixed charge Q int : In equation [10], it is assumed the majority of the interface Hf are passivated, that is…”

Section: Oxygen Pressure-dependent Flat Band Voltage Shifts In Hfo 2 ...mentioning

confidence: 99%

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Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

McIntyre¹

2007

ECS Trans.

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Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their electrical activity and their contributions to important kinetic processes. In addition to point defects in the "bulk" of HfO2 thin films, defects resulting from differences in oxygen coordination across the internal hafnium oxide/silicon oxide interface are considered.

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“…When the device switches from accumulation into inversion, the time from V fb to V t is the hole emission time (t em,h ). Similarly, when a device switches from inversion into accumulation, the electron emission time is t em,e [29]. The various parameters of the waveform are visualized in Figure 2.10.…”

Section: Charge (De-)trappingmentioning

confidence: 99%

Recovery of hot-carrier degraded nMOSFETs

Jong¹

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Proefschrift ter verkrijging van de graad van doctor aan de Universiteit Twente, op gezag van de rector magnificus, prof. dr. ir. A. Veldkamp, volgens besluit van het College voor Promoties in het openbaar te verdedigen op donderdag 12 mei 2022 om 12.45 uur door Maurits Jelke de Jong geboren op 16 oktober 1990 te Heerenveen (Fr.) iv Dit proefschrift is goedgekeurd door: prof. dr. J. Schmitz (promotor) dr. ir. C. Salm

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On THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

Cited by 9 publications

References 36 publications

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode

Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

Recovery of hot-carrier degraded nMOSFETs

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On THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

Cited by 9 publications

References 36 publications

Constant voltage stress induced current in Ta2O5stacks and its dependence on a gate electrode

Constant voltage stress induced current in Ta2O5stacks and its dependence on a gate electrode

Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

Recovery of hot-carrier degraded nMOSFETs

Contact Info

Product

Resources

About

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode

Constant voltage stress induced current in Ta₂O₅stacks and its dependence on a gate electrode