Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state Pb density at a low value of only 3–6×1011 cm−2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.
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