On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

Иконников, А. В.; Bovkun, L. S.; Rumyantsev, V. V.; Криштопенко, С. С.; Aleshkin, V. Ya.; Kadykov, A. M.; Орлита, М.; Potemski, M.; Гавриленко, В. И.; Morozov, S. V.; Dvoretsky, S. A.; Михайлов, Н. Н.

doi:10.1134/s1063782617120090

Cited by 9 publications

(5 citation statements)

References 26 publications

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“…Thus, narrow‐gap HgCdTe in QW layer is more sensitive to the temperature than the barriers with x ≈0.6, and one can expect that the bandgap increases with temperature in narrow‐gap QWs. This conclusion can be confirmed by the accurate calculation and experiment …”

Section: Resultssupporting

confidence: 66%

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Rumyantsev

Fadeev

Aleshkin

et al. 2019

Physica Status Solidi (b)

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Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/ HgCdTe quantum well (QW) heterostructures are studied in 5-20 mm wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the "operating" temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the "operating" temperature in structure with narrower QW.of the band structure of narrow-gap HgTe/ HgCdTe heterostructures on carrier recombination mechanisms. [4] Recently, it was shown that HgCdTe-based QW can provide stimulated emission in the very longwavelength IR, [5] suggesting that such structures can be interesting for longwavelength emitters.At present moment, the best-performing semiconductor sources for far IR range are quantum cascade lasers (QCLs). They demonstrate ultimate figures of merit almost in the entire IR range. [6] The only "blind spot" of QCLs caused by the strong lattice absorption in traditional production materials (GaAs and InP) lies at wavelengths between 20 and 60 μm. InAs-based and Al-free QCLs are tackling this wavelength range from the mid-IR side, [7] while GaN QCLs have been proposed for frequencies above 5 THz. [8] However, interband lasers are also of interest since they are less demanding from the technological viewpoint and allow wavelength tuning with temperature. The cornerstone of effective light emitter, especially in far infrared range (FIR) range, is to suppress the non-radiative recombination, in

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Section: Resultssupporting

confidence: 66%

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Rumyantsev

Fadeev

Aleshkin

et al. 2019

Physica Status Solidi (b)

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“…Figure 3 a shows a false-color plot of relative magneto-transmission of structure#A0130 at 4.2 K.One may immediately recognize the most pronounced interband transitions α- and βin the energy range from 70 to 100meV, reported earlier for structures with single QWs [ 27 , 39 ]. Nonetheless, observation of additional absorption features at higher energies provides obvious benefits for comparison with calculated transitions, following the procedure described earlier [ 27 ].…”

Section: Resultsmentioning

confidence: 56%

“…Note that the cutoff wavelength, corresponding to the fundamental interband transition from the first valence sub-band v1 to the first electron sub-band c1 (see Figure 3 b), is shorter for 77 K for all structures. The cutoff wavelength shortening with temperature is a characteristic feature of HgTe/CdHgTe structures, with only the normal band ordering [ 39 ], and thus, immediately suggests that the QW parameters have considerable deviation from the ones provided by ellipsometry (see Table 1 ). It is well known that the HgTe/CdTe QWs wider than the critical thickness ~6.3 nm have inverted band structure, for which the bandgap shrinks [ 40 ] as the temperature is increased in contradiction to our experiment.…”

Section: Resultsmentioning

confidence: 99%

Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

et al. 2021

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HgTe/CdHgTe quantum well (QW) heterostructures have attracted a lot of interest recently due to insights they provided towards the physics of topological insulators and massless Dirac fermions. Our work focuses on HgCdTe QWs with the energy spectrum close to the graphene-like relativistic dispersion that is supposed to suppress the non-radiative Auger recombination. We combine various methods such as photoconductivity, photoluminescence and magneto-optical measurements as well as transmission electron microscopy to retrofit growth parameters in multi-QW waveguide structures, designed for long wavelengths lasing in the range of 10–22 μm. The results reveal that the attainable operating temperatures and wavelengths are strongly dependent on Cd content in the QW, since it alters the dominating recombination mechanism of the carriers.

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“…For QW with inverted band ordering, the bandgap shrinks with temperature down to zero and then starts to grow [21]. However, in this work we consider narrow gap HgTe/CdHgTe QWs with normal band ordering, which increase their bandgap with temperature [22].…”

Section: Resultsmentioning

confidence: 99%

Threshold energies of Auger recombination in HgTe/CdHgTe quantum well heterostructures with 30–70 meV bandgap

Aleshkin

Dubinov

Rumyantsev

et al. 2019

J. Phys.: Condens. Matter

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We calculate the threshold energies of Auger recombination in the HgTe/CdHgTe quantum well heterostructures with the bandgap in the 30–70 meV range. It is shown that there is a maximum in the temperature dependence of the threshold energy for Auger process involving two electrons and a hole. For Auger process involving two holes and an electron, in which the hole is in the second valence subband in the final state, the threshold energy decreases down to zero and then increases steeply as temperature grows. The results of calculation can be considered as guidelines for designing the long-wavelength laser structures.

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On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

Cited by 9 publications

References 26 publications

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Threshold energies of Auger recombination in HgTe/CdHgTe quantum well heterostructures with 30–70 meV bandgap

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