Mercury vacancies, acting as double acceptors, are the dominant point defects in ternary HgCdTe alloys. Though HgCdTe is one of the leading materials in infrared optoelectronics, the energy spectra of the vacancies are still a matter of some debate. This work investigated the rates at which holes are captured to a singly ionized mercury vacancy via acoustic phonon emission in narrow-gap Hg1−xСdxTe with technologically relevant x~0.22. Combined with the calculated rates of intracenter transitions, the data allow one to predict the most pronounced optical transitions in the emission spectrum of a double-charged acceptor. The results are sustained by the photoluminescence spectroscopy in the terahertz domain, allowing one to identify the emission band that is related to neutral vacancies.
Long-wavelength stimulated emission (SE) is studied in optically pumped HgCdTe quantum well heterostructures with dielectric waveguides. Continuous temperature tuning of the wavelength from 27 to 18 μm is achieved in structures with optimized waveguides. Above 27 μm, SE clamps at 31 μm wavelength, where mode leaking is reduced due to the Reststrahlen effect in the GaAs substrate. The operating temperature is mainly limited by the activation of Auger recombination in quasi-equilibrium conditions, while at low temperatures, we expect that lowering initial carrier heating would enhance the gain considerably. We conclude that exploiting the Reststrahlen effect should allow one to achieve continuous wavelength tuning around 30 μm and operating wavelengths up to 40 μm with technologically attainable epistructure thickness.
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