Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Rumyantsev, V. V.; Razova, A. A.; Bovkun, L. S.; Tatarskiy, Dmitriy A.; Mikhailovskii, Vladimir; Жолудев, М. С.; Иконников, А. В.; Svetikova, T. A. Uaman; Maremyanin, K. V.; Utochkin, V. V.; Fadeev, M. A.; Remesnik, V. G.; Aleshkin, V. Ya.; Михайлов, Н. Н.; Dvoretsky, S. A.; Потемски, М.; Орлита, М.; Гавриленко, В. И.; Morozov, S. V.

doi:10.3390/nano11071855

Cited by 8 publications

(3 citation statements)

References 43 publications

(49 reference statements)

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“…Knowing the QW parameters, one can use numerical methods to estimate the efficiency of Auger recombination, which is one of the main factors hindering the production of long-wavelength SE. As was shown in the works [9,10], the efficiency of Auger recombination correlates with the value of the so-called threshold energy of the Auger process, which is uniquely determined by the band spectrum of the structure under study. The threshold energy is defined as the minimum kinetic energy, in which case a system of three particles can participate in the Auger process [11].…”

Section: Introductionmentioning

confidence: 81%

“…This is especially topical in the wavelength range of 20−60 µm, which, due to strong lattice absorption in materials A III B V used to create QCLs, today remains practically not covered by them [6,7]. It is assumed that the quantum efficiency of interband photoluminescence (PL) and stimulated emission (SE) of structures with Hg(Cd)Te/CdHgTe QWs at the same band gap depends on the carrier-dispersion law [8,9], the form of which is determined by the parameters (thickness and proportion of cadmium in the QW, as well as the composition of the barriers).…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence spectroscopy of HgCdTe quantum well heterostructures in the 15-30 μm wavelength range

et al. 2022

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In recent years, narrow gap heterostructures with Hg1-xCdxTe/CdyHg1-yTe quantum wells have been actively studied both in connection with the topic of topological insulators and from the point of view of their application in optoelectronics in the terahertz domain. In this work, we study the photoconductivity and photoluminescence spectra of structure with a band gap of 40 meV. In addition to interband transitions, the features of the spectra associated with the resonance states of acceptors have been identified. The possibilities of using the structures under study to develop interband emitters at a wavelength of ~30 μm, which is inaccessible to existing quantum-cascade lasers, are discussed. Keywords: narrow-gap semiconductors, HgCdTe, resonance states, acceptors, photoluminescence.

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Section: Introductionmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Photoluminescence spectroscopy of HgCdTe quantum well heterostructures in the 15-30 μm wavelength range

et al. 2022

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“…Ex situ characterization was performed using temperature-dependent photoluminescence (PL) spectroscopy [23]. The sample was mounted on a cold finger of helium closed-cycle refrigerator and optically pumped with an 808 nm diode laser; PL signal was collected from top of the structure.…”

Section: Methodsmentioning

confidence: 99%

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

et al. 2022

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HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3–5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier dispersion. In this work, we analyze the thresholds of stimulated emission (SE) under optical pumping from heterostructures with a different number of QWs in the active region of the structure. Total losses in structures are determined from the comparison of thresholds for the different number of QWs in the active region. It is shown that, thanks to the increased modal gain, a higher number of QWs results in lower threshold pumping intensity and, consequently, higher temperature of SE. These results indicate that improvements to the modal gain can result in a moderate uplift in the temperature of SE from mid-infrared HgCdTe-based heterostructures. On the other hand, at a high enough QW count threshold, the intensity no longer depends on the number of the QWs and is determined by the transparency concentration of a single QW.

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Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

Aleshkin,

Rudakov,

Morozov

2023

Journal of Applied Physics

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This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. The first is a decrease in the nonequilibrium carrier threshold concentration and the threshold power density of optical excitation required for the plasmon-phonon gain. The second is a significant (tens of times) decrease in the effective refractive index of the generated plasmon-phonons, which improves the output of the plasmon-phonon radiation from the edge of the structure. The value of the optimal bandgap and the optimal number of quantum wells in the structure for plasmon-phonon gain are discussed.

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Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Cited by 8 publications

References 43 publications

Photoluminescence spectroscopy of HgCdTe quantum well heterostructures in the 15-30 μm wavelength range

Photoluminescence spectroscopy of HgCdTe quantum well heterostructures in the 15-30 μm wavelength range

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

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