2014
DOI: 10.1109/tmtt.2014.2354017
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On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

Abstract: This paper describes the analysis and design of saturated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) switches for millimeter-wave applications. A switch optimization procedure is developed based on detailed theoretical analysis and is then used to design multiple switch variants. The switches utilize IBM's 90-nm 9HP technology, which features SiGe HBTs with peak of 300/350 GHz. Using a reverse-saturated configuration, a single-pole double-throw switch with a measured insertion loss of 1.0… Show more

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Cited by 81 publications
(38 citation statements)
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“…Different implementations have been proposed recently for mmWave applications [57], [58] which exhibit low insertion loss (≈ 1dB) and good isolation properties. The power consumption of the switch is low [59], [60], we assume a value of P SW = 5 mW.…”
Section: Power Consumption Modelmentioning
confidence: 99%
“…Different implementations have been proposed recently for mmWave applications [57], [58] which exhibit low insertion loss (≈ 1dB) and good isolation properties. The power consumption of the switch is low [59], [60], we assume a value of P SW = 5 mW.…”
Section: Power Consumption Modelmentioning
confidence: 99%
“…Different implemen tations have been proposed recently for mmWave applications [25], [26] which exhibit low insertion loss and good isolation properties. The power consumption of the switch is low (lower than 10 mW [27], [28]), and can be neglected in the computation of the total power consumed by the receiver based on switches.…”
Section: Power Consumption Modelmentioning
confidence: 99%
“…Given Wo p t. our aim is to solve the problem: minimize II Wo p t -SWBB IIF, S,W BB (27) where S of size Nr x Lr is a binary matrix with a single one per row. The proposed algorithm for finding the optimum S and W BB that minimize the Frobenius nonn is summarized in Algorithm l. This algorithm is fast and finds the optimum solution to (27). Notice that solving (27) is not equivalent to maximizing the spectral efficiency.…”
Section: A Minimum Frobenius Norm (Mfn)mentioning
confidence: 99%
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“…To further improve the insertion loss in this SPDT design, the shunt HBT devices are used in the reverse-saturation mode by connecting the emitter terminal of the device to the RF output and grounding the collector terminal. Using the shunt HBT switches in the reverse-saturation mode increases the R of f and decreases the C of f values with respect to the shunt HBT switches used in the forward-saturation mode [8], [9].…”
Section: Circuit Designmentioning
confidence: 99%