A D-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers

Abstract

Abstract-This paper presents a low insertion loss and high isolation D-band (110-170 GHz) single-pole double-throw (SPDT) switch utilizing reverse-saturated SiGe HBTs for Dickeradiometers. The SPDT switch design is based on the quarterwave shunt switch topology and implemented with further optimizations to improve the overall insertion loss and decrease the total chip size in a commercial 0.13-μm SiGe BiCMOS technology. Measurement results of the implemented SPDT switch show a minimum insertion loss of 2.6 dB at 125 GHz and a maximum isolation of 30 dB at 151 GHz while the measured input and output return loss is greater than 10 dB across 110-170 GHz. Total power consumption of the SPDT switch is 5.3 mW while draining 5.6 mA from a 0.95 V DC supply. Overall chip size is only 0.5×0.32 = 0.16 mm 2 , excluding the RF and DC pads.

40 dB-Isolation, 1.85 dB-Insertion Loss Full CMOS SPDT Switch with Body-Floating Technique and Ultra-Small Active Matching Network Using On-Chip Solenoid Inductor for BLE Applications

“…Therefore, the implement of the BLE should be based on the standard Complementary Metal-Oxide-Semiconductor (CMOS) process, which is commonly used for a low-cost solution. Several approaches have been proposed and the implemented SPDT switch has high performance for the transceiver system [12][13][14][15][16]. Most radio-frequency (RF) SPDT switches use the Gallium Arsenide (GaAs) process to implement the circuit because of the high on-state resistance and low off-state capacitance of the GaAs transistor.…”

State of the Art Sub-Terahertz Switching Solutions

“…Isolation of these switches is comparable with CMOS devices (18-22 dB). The highest isolation in SiGe shunt switches was achieved in [23] and [24] (21-29 dB [23] and 26-31 dB [24] in 80-170 GHz and 110-170 GHz bands, respectively), however this values are still comparable with CMOS, and these devices exhibit higher insertion losses in the 2.6-4.5 dB range. It should also be noted that SiGe shunt switches can achieve significantly faster operation (75 ps in [20]) and also higher power handling capabilities compared to CMOS switches (IP1dB = 35 dBm in [21]).…”

Hotel Architecture in Portugal

“…In addition, for RISs, we have the additional complexity of integrating the reconfigurable elements and the corresponding bias circuitry. Based on previous works on reconfigurable technologies for RIS unit cells [15], at least 3 dB of insertion losses are expected. Therefore, 25 % aperture efficiency can be considered as a realistic figure for defining an efficient RIS in terms of RF performance.…”