On the Aging Effects of 4H-SiC Schottky Photodiodes Under High Intensity Mercury Lamp Irradiation

Thin Metal Film Ni2Si/4H—SiC Vertical Schottky Photodiodes

“…Finally first preliminary reliability tests (photo-aging under UV irradiance > 10mW/cm 2 at 256 nm during a 200 h period [13], long time storage at 250°C during a 120 h period in N 2 atmosphere) do not show any significant deterioration of the electro-optical performances of our devices. In Fig.…”

High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

“…It can be used to determine the impurity states and defect centers in the semiconductor, which in turn evaluate the structural and physical parameters of the photodiodes [10]. However, previous works with investigation of the dynamic properties of the 4H-SiC-based photodiodes mostly focus on the Schottky structure [11][12][13][14]. The C-V characteristics of the 4H-SiC p-i-n photodiodes have not been fully investigated so far.…”

4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring

“…A dark current of a few picoamperes at room temperature, a photoresponsivity peak value of about 0.1 A/W at 290 nm and an UV-visible rejection ratio (i.e., the ratio between the optical sensitivity at 400 and 290 nm), lower than 2 were measured at on these devices [12]. Furthermore, preliminary aging tests performed on the detectors biased at the same reverse voltage did not show any significative degradation of the optical response after several hundreds of hours of exposure at 256 nm at an irradiance of about 10 [8]. In these first demonstrator boards, the photodiode is operated in photoconductive mode and biased at .…”

“…To enhance the sensitivity in blue-near UV wavelength ranges Si detectors are usually doped with phosphors which can degrade under high intensity and prolonged UV light exposure [7], [8]. In applications where the threat level of UV radiation to human health should be constantly monitored, the absence of aging effects on the detector response under intense UV light fluxes is of paramount importance to ensure the proper operation of the UV radiometer in the course of time.…”