High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

Cai, Jiafa; Chen, Xiaping; Hong, Rongdun; Yang, Weifeng; Zhang, Wu

doi:10.1016/j.optcom.2014.07.071

Cited by 34 publications

(24 citation statements)

References 27 publications

(29 reference statements)

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“…At each applied reverse bias, the capacitance increased as the temperature increased. This may be attributed to the increasing effective charge density in the space charge region with temperature; similar effects have been explained by the presence of deep level defects and the carriers trapped by them [11,16,18].…”

Section: Capacitance-voltage Measurementsmentioning

confidence: 66%

“…The first 4H-SiC p-i-n photodetectors presented in [10], in which photocurrent measurements under UV illumination as a function of applied reverse bias were reported. More recently, electrical characterization and photoresponsivity measurements on 4H-SiC p-i-n photodetectors were reported in [11], showing a leakage current density of 9.95 × 10 −8 A/cm 2 at 100 kV/cm internal electric field, and a peak responsivity of 0.15 A/W at 268 nm, both at 450 K temperature. In [12], Hu et al reported Ni/4H-SiC Schottky photodiodes showing a leakage current density of 0.4 × 10 −12 A/cm 2 at 8 kV/cm internal electric field, at room temperature and a peak quantum efficiency of 65% at 276 nm, at photovoltaic mode operation.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

et al. 2015

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Section: Capacitance-voltage Measurementsmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

et al. 2015

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“…In order to improve the performance of a p-i-n device, a key factor is to increase the light transmission rate, which requires a structure designed so that light is absorbed in the depletion region. Therefore, selecting a translucent metal as the Ohmic contact and decreasing the thickness of the p layer are beneficial [ 43 ]. Bugallo et al reported a visible-blind UV photodetector based on p-i-n GaN nanowire ensembles on a Si substrate [ 44 ].…”

Section: Uv Detectorsmentioning

confidence: 99%

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Zou

Zhang

et al. 2018

Sensors

249

143

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Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

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“…[1][2][3][7][8][9][10][11][12][13][14][15][16][17][18] Nowadays, optical properties of SiC thin films have attracted researchers' attention in many fields such as photodiodes, phototransistors, photoconductive switches, solar cells, extreme ultraviolet (EUV) reflectors, and astrophysics. [19][20][21][22][23][24] The optical dispersion behavior of SiC thin films must be explored in depth to design and fabricate such optoelectronic and photonic devices, as the semiconductor materials are characterized by their unique complex dielectric functions.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Mourya

Jaiswal

Malik

et al. 2018

Journal of Applied Physics

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In this work, we have reported the in-situ fabrication of nanocrystalline rhombohedral silicon carbide (15R-SiC) thin films by RF-magnetron sputtering at 800 C substrate temperature. The structural and optical properties were investigated for the films grown on four different substrates (ZrO 2 , MgO, SiC, and Si). The contact angle measurement was performed on all the substrates to investigate the role of interfacial surface energy in nucleation and growth of the films. The XRD measurement revealed the growth of (1 0 10) orientation for all the samples and demonstrated better crystallinity on Si substrate, which was further corroborated by the TEM results. The Raman spectroscopy confirmed the growth of rhombohedral phase with 15R polytype. Surface characteristics of the films have been investigated by energy dispersive x-ray spectroscopy, FTIR, and atomic force microscope (AFM) to account for chemical composition, bonding, and root mean square surface roughness (d rms). The optical dispersion behavior of 15R-SiC thin films was examined by variable angle spectroscopic ellipsometry in the wide spectral range (246-1688 nm), including the surface characteristics in the optical model. The non-linear optical parameters (v 3 and n 2) of the samples have been calculated by the Tichy and Ticha relation using a single effective oscillator model of Wemple and Didomenico. Additionally, our optical results provided an alternative way to measure the ratio of carrier concentration to the effective mass (N/m*). These investigated optical parameters allow one to design and fabricate optoelectronic, photonic, and telecommunication devices for deployment in extreme environment.

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High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics

Cited by 34 publications

References 27 publications

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

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