Thin Metal Film Ni₂Si/4H—SiC Vertical Schottky Photodiodes

Abstract

Photodetection in the ultraviolet (UV) region has drawn extensive attention owing to its various applications in industrial, environmental, and even biological fields. In this letter, we report on the morphological and electro-optical characteristics of continuous thin metal film Ni 2 Si/4H-SiC photodiodes properly designed for the realization of an extremely compact digital sensor suited to measure the total sun UV radiation for environmental UV light monitoring.

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

“…This ratio was found to be 10 −3 . The real degree of visible blindness of the photodiode is expected to be better, as for previously reported similar devices [14,32].…”

How can we use SiC?

“…These properties have been successfully implemented for the realization of visible blind Shottky photodiodes, as reported in [3]. The R&D on SiC based Shottky photodiodes has also led to the realization of commercial products by ST microelectronics [4].…”

“…The spectral sensitivity for a 4H-SiC Shottky device with inter-digit Shottky contacts is discussed for example in [3]. The SiC device used consisted of a 4 µm thick n-type layer with a semi-transparent Shottky contact (called "interdigit" contact) made of 2 µm wide metalized strips with an inter-strip distance of 10 µm, which allows transparency to the incident UV radiation.…”

Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

“…1 Using this feature, the detection technology based on solar-blind UV light has outstanding anti-interference characteristics and has been widely applied in short-wave communication, missile tracking, fire early warning, astronomical observation, oil pollution monitoring, biomedicine and so on. 2–10…”