On growth mechanisms and dynamic simulation of growth process based on the experimental results of nanowire growth by VLS method on semiconductor substrates

An, Dao Khac; Chung, Nguyen Xuan; Trang, Pham Hong; Vuong, Hoang Van; Phong, Phan Viet; Tuan, Phan Anh

doi:10.1088/1742-6596/187/1/012052

Cited by 4 publications

(9 citation statements)

References 10 publications

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“…Here, the NWs have grown vertically with strong bases, and there are Au spheres (white in color) located on the tops of the NWs. This is evidence of the VLS mechanism, which predominates during the growth process [7][8][9]. The VLS growth mechanism could be explained here partly by the initial VLS mechanism [7] or by the Oxide Assisted Growth (OAG) Au catalyst-mediated VLS mechanism suggested by Y.F.…”

Section: Introductionmentioning

confidence: 66%

“…The Au metal catalyst islands will be disturbed, forming Au droplets. The thicker the Au islands are, the bigger the Au droplets that will be formed [8,9]. During the decomposition of the GaAs substrate, the Ga and As atoms diffuse rapidly into the Au droplets, forming SNCs inside the Au metal catalyst islands.…”

Section: On the Formation Mechanism Of Snkementioning

confidence: 99%

“…During the second growing-diffusion step at temperature T 2 at or above the Au/GaAs Eutectic temperature (630 • C) for growing-diffusion time t 4 , the Au/Ga liquid-solid phase will be formed. During this process, the diffusion of Ga and As atoms and the absorption of oxygen (O) atoms will continue taking place, forming SNCs inside the Au island ( [8,9] Figure S2). Balancing the Ga, As diffusion fluxes, vacancy accumulations will be generated, forming Kirkendall voids beneath the SNCs.…”

Section: On the Formation Mechanism Of Snkementioning

confidence: 99%

“…In this case, although the Au island thickness is very thick (1000 nm), the growing diffusion temperature (T 2 = 620 • C) in the second step is lower than the Eutectic temperature (630 • C) of the Au/GaAs system. The liquid-solid Au/Ga/O phase, especially the Ga/O nucleations (NW seeds), are not yet fully formed here, so it is difficult to grow the nanowires [8,9]. Here, the NP configurations mainly formed and diffused in an outward direction from the edge of the Au catalyst island, along the radius direction of the circle formed by the Au catalyst island (Figure 1d).…”

Section: Introductionmentioning

confidence: 96%

“…Unfortunately, to date, there have been few works dealing with this kind of SNKE in detail. In our previously published works, we outlined several problems related to the formation of Au droplets, such as the growth process of nanowires using the Vapor-Liquid-Solid (VLS) method [7] with Au metal catalyst layer, but setting up a model of SNKE and discussing its formation mechanism has not been carried out in detail [8,9]. The formation style of this SNKE is complex and considerably different from that of NKE producing hollow nanotubes and hollow spheres [3][4][5][6]10,11].…”

Section: Introductionmentioning

confidence: 99%

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The Formation Mechanism and Model of the Surface Nanoscale Kirkendall Effect on Au Catalyst Island/GaAs Substrate by Thermal Vapor-Liquid-Solid Method with Two-Step Temperature Mode

et al. 2019

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The Surface Nanoscale Kirkendall Effect is an important part of the Kirkendall effect, and has special role in the formation of surface nano material configurations. It can also cause faults in interconnection contact systems, yet this kind of effect has not yet been identified and studied in detail. Based on the obtained experimental results, this paper proposes a formation mechanism and model of the mixed-surface nanoscale Kirkendall effect formed by the role of Au metal catalyst islands/strips on a GaAs surface using the thermal Vapor-Liquid-Solid method. The diffusion of Ga, As, O atoms and the absorption of O atoms from a low-vacuum ambient into Au droplets forming surface nanoscale Au/Ga/O clusters leaves behind vacancies and voids; this process results in the nanoscale Kirkendall effect. In addition, the outward diffusion of the surface nanoscale Au/Ga/O clusters leaving behind bare GaAs holes in place of the former Au island forms the surface Kirkendall effect. Consequently, the combination of the two mentioned effects forms a new kind of KE, the so-called Surface Nanoscale Kirkendall Effect. This effect is generated either partly or completely, depending on the technological conditions. Accompanying this effect, the different configurations of nanomaterials have grown in number. The outward diffusion of surface nanoscale Au/Ga/O clusters was caused by the concentration of surface cluster gradients, the weakening of chemical bonds due to the accumulation of vacancies, the porosity, and pit-etching beneath the Au island. The diffusivity of surface Au/Ga/O clusters is numerically estimated. Its values vary from 2 × 10−10 to 10−11 m2/s. Potential applications of the surface nanoscale Kirkendall effect, making use of its advantages, limitations and disadvantages, are also discussed and proposed.

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