On Electron Mechanism of Slow Charge Relaxation on Semiconductor Surfaces

Abstract

The kinetics of charge capture by slow surface states on homogeneous and non‐homogeneous surfaces is considered. Surface non‐homogeneity is taken into account using the distribution function of surface elements with relaxation times, g(τ) ∼ τ−1, proposed by Kingston and McWhorter. It is shown that within the framework of the electron‐transfer mechanism it is possible to explain the basic laws of slow relaxation: a) non‐exponentiality, b) dependence of the relaxation law on the humidity of the environment, c) correlation between the initial velocity of slow relaxation and the intensity of the electric field on the surface.

Slow relaxation kinetics on a heterogeneous semiconductor surface

“…It has been shown in [9], that the empirical law (1) is easily explained in the framework of the electron model of slow relaxation while taking into account the distri-…”