Slow relaxation kinetics on a heterogeneous semiconductor surface

Abstract

The slow relaxation kinetics on heterogeneous semiconductor surface are considered. Surface non‐homogeneity is taken into account using Gaussian and uniform distribution functions of the potential barriers, separating slow surface states from the semiconductor volume, in height g(W) or thickness g(d). The physical sense of the empirical parameters characterizing slow relaxation process is ascertained. The methods of definition of the distribution functions g(W) or g(d) through the experimental relaxation kinetics are discussed.

On the mechanism of dissipation of energy released in the capture of charge carriers to adsorptive slow states of a semiconductor

“…where AEz determines the mean height of potential barriers surmounted by charge carriers when they are captured to the AS by activation [3]. Many investigators attribute the activation character of capture to AS to the presence on the surface of a buffer layer separating the AS from the semiconductor bulk and retarding the electron exchange (see reviews [l, 21).…”