2002
DOI: 10.1016/s0928-4931(02)00207-2
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Oligothiophene films under electron irradiation: electron mobility and contact potentials

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Cited by 17 publications
(8 citation statements)
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“…Therefore, the work function values of 4.66 eV for ZnS and 4.58 eV for Si͑111͒ can be deduced by assuming 4.60 eV for HOPG. 22 The smaller absolute value of the compensated voltage for ZnS than that for Si͑111͒, consistent with the darker features appeared in Fig. 2͑b͒, indicates smaller electrostatic force interactions.…”
supporting
confidence: 65%
“…Therefore, the work function values of 4.66 eV for ZnS and 4.58 eV for Si͑111͒ can be deduced by assuming 4.60 eV for HOPG. 22 The smaller absolute value of the compensated voltage for ZnS than that for Si͑111͒, consistent with the darker features appeared in Fig. 2͑b͒, indicates smaller electrostatic force interactions.…”
supporting
confidence: 65%
“…The measurements of the surface potential were done with a McAllister KP6500 Kelvin‐Probe (KP) system under controlled atmosphere (vacuum (10 −6 mbar), pure oxygen, air). Highly ordered pyrolytic graphite with a WF of 4.5 eV was used as reference …”
Section: Methodsmentioning
confidence: 99%
“…The measurements of the surface potential were done with a McAllister KP6500 Kelvin-Probe (KP) system in ambient air or under controlled atmosphere (vacuum, pure oxygen). Highly ordered pyrolytic graphite with a WF of 4.5 eV was used as reference 70 71 .…”
Section: Methodsmentioning
confidence: 99%