Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Shen, L.; Veldhoven, P.J. van; Jiao, Yuqing; Calzadilla, V.M. Dolores; Tol, J.J.G.M. van der; Roelkens, G.; Smit, M.K.

doi:10.1109/jphot.2016.2524208

IEEE Photonics J.

2016

DOI: 10.1109/jphot.2016.2524208

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Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

L. Shen

P.J. van Veldhoven

Yuqing Jiao

et al.

Abstract: In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to annealing-free ohmic contacts and low contact resistances at the level of 10 À7 cm 2 . It also leads to strong band-filling effects in InGaAs and InGaAsP, which result in low optical absorption losses in the contact… Show more

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Cited by 7 publications

(10 citation statements)

References 24 publications

(37 reference statements)

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“…Recently Shen et al [9] used the bandfilling effect to explain the low-optical-loss in highly-doped n-InGaAs contact layers. In [9] a model by Weber [10] is used to predict the electron-concentration-dependent absorption in n-InGaAs and includes three free-carrier induced effects: bandfilling, bandgap shrinkage and free carrier absorption.…”

mentioning

confidence: 99%

“…In [9] a model by Weber [10] is used to predict the electron-concentration-dependent absorption in n-InGaAs and includes three free-carrier induced effects: bandfilling, bandgap shrinkage and free carrier absorption. The Urbach tail was neglected.…”

mentioning

confidence: 99%

“…The Urbach tail was neglected. To predict the absorption of n-InGaAs the same model as in [9] are used to predict the performance of the proposed EAM. Selected equations from [9] and [10] are repeated here to explain the modeling.…”

mentioning

confidence: 99%

“…The carriers are modeled first as a cause for bandgap shrinkage, followed by their filling of the band [9]:…”

mentioning

confidence: 99%

“…Here we apply the model to n-InGaAs with the same parameters as in [9] and present the absorption dependence of n-InGaAs from eq. (1) on electron density and photon energy.…”

mentioning

confidence: 99%

See 4 more Smart Citations

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract-We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…The carriers are modeled first as a cause for bandgap shrinkage, followed by their filling of the band [9]:…”

mentioning

confidence: 99%

“…Here we apply the model to n-InGaAs with the same parameters as in [9] and present the absorption dependence of n-InGaAs from eq. (1) on electron density and photon energy.…”

mentioning

confidence: 99%

See 3 more Smart Citations

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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show abstract

Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon

et al. 2017

Self Cite

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Nanoscale light sources using metal cavities have been proposed to enable high integration density, efficient operation at low energy per bit and ultra-fast modulation, which would make them attractive for future low-power optical interconnects. For this application, such devices are required to be efficient, waveguide-coupled and integrated on a silicon substrate. We demonstrate a metal-cavity light-emitting diode coupled to a waveguide on silicon. The cavity consists of a metal-coated III–V semiconductor nanopillar which funnels a large fraction of spontaneous emission into the fundamental mode of an InP waveguide bonded to a silicon wafer showing full compatibility with membrane-on-Si photonic integration platforms. The device was characterized through a grating coupler and shows on-chip external quantum efficiency in the 10−4–10−2 range at tens of microamp current injection levels, which greatly exceeds the performance of any waveguide-coupled nanoscale light source integrated on silicon in this current range. Furthermore, direct modulation experiments reveal sub-nanosecond electro-optical response with the potential for multi gigabit per second modulation speeds.

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High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

et al. 2021

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Highly doped graphene holds promise for next-generation electronic and photonic devices.However, chemical doping cannot be precisely controlled, and introduces external disorder that significantly diminishes the carrier mobility and therefore the graphene conductivity. Here, we show that monolayer tungsten oxyselenide (TOS) created by oxidation of WSe2 acts as an efficient and low-disorder hole-dopant for graphene. When the TOS is directly in contact with graphene, the induced hole density is 3 × 10 13 cm -2 , and the room-temperature mobility is 2,000 cm 2 /V•s, far exceeding that of chemically-doped graphene. Inserting WSe2 layers between the TOS and graphene tunes the induced hole density as well as reduces charge disorder such that the mobility exceeds 20,000 cm 2 /V•s and reaches the limit set by acoustic phonon scattering, resulting in sheet resistance below 50 /□. An electrostatic model based on work-function mismatch accurately describes the tuning of the carrier density with WSe2 interlayer thickness. These films show unparalleled performance as transparent conductors at telecommunication wavelengths, as shown by measurements of transmittance in thin films and insertion loss in photonic ring resonators. This work opens up new avenues in optoelectronics incorporating two-dimensional heterostructures including infrared transparent conductors, electro-phase modulators, and various junction devices.

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Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes

Cited by 7 publications

References 24 publications

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

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