Offset in CMOS magnetotransistors. I. Analysis of causes

Metz, Matthias; Balres, H.

doi:10.1109/16.944181

Cited by 12 publications

(5 citation statements)

References 23 publications

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“…A large number of studies and research work investigated experimentally the impact of different device and technological parameters on the enhancement on the performance of these sensors [11][12][13][14][15][16][17]. The continuing improvement of the MOSFET magnetic sensor has resulted in a strong enhancement in their performance and consequently in their applications.…”

Section: Introductionmentioning

confidence: 98%

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

et al. 2010

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Characteristics of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) magnetic sensors have been investigated using a three-dimensional physical simulator which accurately couples the magnetic field equation and the carrier transport equations. The effects of the device geometric parameters, the bias conditions, and the magnetic field on the relative sensitivity of a split drain magnetic sensors are accurately determined. The MOSFET magnetic sensor capability is further enhanced by suggesting an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the suggested magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

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Section: Introductionmentioning

confidence: 98%

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

et al. 2010

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“…By a smart combination of AMR and LMT sensor signals, a low-cost 360° sensor system with a high-end angular accuracy (<0.5°) can be made. Crucial is to keep LMT offset [4], [5] drift and LF noise acceptably small, which can avoid costly calibration procedures.…”

Section: Introductionmentioning

confidence: 99%

MOS-gated bipolar Magnetotransistors for 360° angular sensing

Zieren

Wunnicke

Reimann

et al. 2014

IEEE SENSORS 2014 Proceedings

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Bipolar npn Lateral MagnetoTransistors (LMTs) are attractive for in-plane magnetic-field sensing, but suffer from large offset. In this paper we introduce LMTs with several new features: (1) usage of a CMOS-SOI process (no substrate leakage), (2) two central emitters for smaller offset, and (3) emitter (E), base (B), and collector (C) contact definition by MOS-gate structures giving lower random fluctuations than Shallow Trench Insulation (STI). By TCAD simulation, modelling and sensor characterization of wafer-level and packaged samples, the sensitivity and offset of various LMT types are assessed over the automotive temperature range from -40°C to 150°C. A highly accurate 360° angular sensor for automotive applications is feasible when two LMT quadrant detectors are combined with an anisotropic magnetoresistance (AMR) 180° sensor using single or dual temperature calibration.

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“…The impact of different device and technological parameters on the performance MOSFET magnetic sensors (MS) is thoroughly investigated [1][2][3] and resulted in a strong enhancement in their performance and consequently in their applications. However, to accurately characterize the operation and to precisely optimize the function of MOSFET-MS, rigorous systematic modeling of their physical properties is a must.…”

Section: Introductionmentioning

confidence: 99%

Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields

Abou‐Elnour

Abo-Elnor

Mohamed

et al. 2006

2006 IEEE International Conference on Information Acquisition

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A highly sensitive linear MOS sensor system for twodimensional detection of magnetic fields is suggested and its characteristics is systematically investigated. First, the effects of device geometric parameters and biasing conditions on the sensor sensitivity are accurately determined using an efficient physical simulator which couples the magnetic field equation and the carrier transport equations. From the simulation results, an enhanced equivalent circuit model for MOS magnetic sensor is proposed and finally the performance of an integrated smart structure which is able to fully detect the magnetic field variations in two-directions is analyzed.

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Offset in CMOS magnetotransistors. I. Analysis of causes

Cited by 12 publications

References 23 publications

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

MOS-gated bipolar Magnetotransistors for 360° angular sensing

Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields

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Offset in CMOS magnetotransistors. I. Analysis of causes

Cited by 12 publications

References 23 publications

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

MOS-gated bipolar Magnetotransistors for 360&#x00B0; angular sensing

Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields

Contact Info

Product

Resources

About

MOS-gated bipolar Magnetotransistors for 360° angular sensing