Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields

Abstract

A highly sensitive linear MOS sensor system for twodimensional detection of magnetic fields is suggested and its characteristics is systematically investigated. First, the effects of device geometric parameters and biasing conditions on the sensor sensitivity are accurately determined using an efficient physical simulator which couples the magnetic field equation and the carrier transport equations. From the simulation results, an enhanced equivalent circuit model for MOS magnetic sensor is proposed and finally the performance of an integrated smart structure which is able to fully detect the magnetic field variations in two-directions is analyzed.