Sensitivity analysis of a smart two-directional MOSFET magnetic sensor

Abstract

Characteristics of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) magnetic sensors have been investigated using a three-dimensional physical simulator which accurately couples the magnetic field equation and the carrier transport equations. The effects of the device geometric parameters, the bias conditions, and the magnetic field on the relative sensitivity of a split drain magnetic sensors are accurately determined. The MOSFET magnetic sensor capability is further enhanced by suggesting an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the suggested magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.