Off-state thermal switching in amorphous SeTeGe system

Mehra, R.M.; Shyam, Radhey; Mathur, P. C.

doi:10.1016/0022-3093(79)90156-x

Cited by 68 publications

(56 citation statements)

References 16 publications

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“…6b asV th versus the temperature for Se 80 Te 15 Ge 5 films of different thicknesses. The obtained relations agree with those obtained before for other amorphous materials [8,9,15].…”

Section: Temperature Dependence Ofv Thsupporting

confidence: 93%

“…5b. The obtained relation agrees with results obtained before for other chalcogenide glasses [8,9,15]. Moreover, I-V characteristic curves for all the investigated film compositions of approximately the same thickness are illustrated in Fig.…”

Section: Thickness Dependence Of the Mean Value Of The Threshold Voltsupporting

confidence: 89%

“…Thin films of the investigated compositions were obtained from bulk samples by the thermal evaporation technique under vacuum and consequent deposition on glass substrates for electrical measurements, and highly polished pyrographite substrates for switching measurements. The thickness of film samples was measured during deposition using a thickness monitor (Edwards, FTM5) and confirmed after deposition by Tolansky's interferometric method [8]. The chemical composition of the investigated samples was checked by energy dispersive X-ray analysis using JOEL 5400 scanning electron microscope.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Afifi

Hegab

Atyia

et al. 2008

Journal of Alloys and Compounds

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“…6b asV th versus the temperature for Se 80 Te 15 Ge 5 films of different thicknesses. The obtained relations agree with those obtained before for other amorphous materials [8,9,15].…”

Section: Temperature Dependence Ofv Thsupporting

confidence: 93%

Section: Thickness Dependence Of the Mean Value Of The Threshold Voltsupporting

confidence: 89%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Afifi

Hegab

Atyia

et al. 2008

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…This observation may be indicated by the increase of DT breakdown with the ambient temperature [36]. The ratio of (DE th /DE r ) for the investigated compound is 0.73 eV which differ from its derived value (0.5) according to an electrothermal model [37]. Thus, switching process for the investigated compound cannot be explained on the basis of an electrothermal model [31,33,38,39].…”

Section: Switching Phenomenonmentioning

confidence: 93%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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“…The thickness of film samples was measured during deposition using a thickness monitor (Edwards, FTM) and confirmed af-ter deposition by Tolansky's interferometric method [20]. The chemical composition of the investigated samples was checked by energy dispersive X-ray (EDX) analysis using a JOEL 5400 scanning electron microscope.…”

Section: Methodsmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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The ac conductivity and dielectric properties of Ge 15 Se 60 X 25 (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10 −5 Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10 2 -10 5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε 1 were found to decrease with frequency and increase with temperature. The maximum barrier height W m for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

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Off-state thermal switching in amorphous SeTeGe system

Cited by 68 publications

References 16 publications

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Memory switching of ZnGa2Te4 thin films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

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Off-state thermal switching in amorphous SeTeGe system

Cited by 68 publications

References 16 publications

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Memory switching of ZnGa2Te4 thin films

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

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Product

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Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films