ODMR study of recombination processes in ionic crystals and silicon carbide

Baranov, P. G.; Romanov, N. G.

doi:10.1007/bf03166047

Cited by 32 publications

(12 citation statements)

References 18 publications

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“…The low resolution of the ODMR method did not allow the observation of B hyperfine ͑hf͒ structures to connect the spectra unambiguously with a B impurity. Subsequent EPR studies at 9.5 GHz on the dB acceptor in 6H-SiC showed the same g parameter as observed in the ODMR experiments 19 leading to the conclusion that in the optical experiments the same dB center is involved. Preliminary ENDOR measurements of dB revealed 11 B signals.…”

Section: Introductionsupporting

confidence: 61%

“…The shallow acceptors introduced in SiC by the group-III impurities have been studied using electron paramagnetic resonance ͑EPR͒, [9][10][11][12][13][14][15][16] Optically Detected Magnetic Resonance ͑ODMR͒, [16][17][18][19][20] high-frequency pulsed EPR and electron-nuclear double resonance ͑ENDOR͒ at 95 GHz, 21 and by ENDOR at conventional frequencies. 22,23 It appears that the behavior of the sB acceptor is strikingly different from that of the shallow Al ͑sAl͒ and shallow Ga ͑sGa͒ acceptors.…”

Section: Introductionmentioning

confidence: 99%

“…19,20,24,25 The ODMR spectra were recorded by monitoring the intensity of the yellow luminescence band in 6H-SiC and its analogue in 4H-SiC. A number of anisotropic signals were observed at 1.5 K, which were ascribed to dB acceptors, and which originated from several types of centers since the relative intensities of the signals vary with the emission wavelength in the luminescence band.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of the deep boron acceptor in boron-doped6H-SiC

et al. 1998

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A high-frequency ͑95 GHz͒ and conventional-frequency ͑9.3 GHz͒ pulsed electron paramagnetic resonance and electron-nuclear double resonance ͑ENDOR͒ study is reported on the deep boron acceptor in 6H-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon position with an adjacent carbon vacancy. The carbon vacancy combines with a boron along the hexagonal c axis. It is concluded that 70-90 % of the spin density resides in the silicon dangling bonds surrounding the vacancy and another 9% on the neighboring carbon atoms. The spin-density distribution is more localized than in the case of the shallow boron acceptor as deduced from the ENDOR experiments.

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Section: Introductionsupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic structure of the deep boron acceptor in boron-doped6H-SiC

et al. 1998

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“…Первые наблюдения ЭПР акцепторов в SiC были произведены Woodbury и Ludwig [9], которые исследовали спектры ЭПР мелкого бора в 6H-SiC. С тех пор примеси III группы, B, Al и Ga с мелкими уровнями в SiC изучались методами ЭПР [10][11], оптически детектируемого магнитного резонанса (ОДМР) [18][19][20][21][22], импульсного ЭПР и импульсного двойного электронноядерного резонанса (ДЭЯР) [23][24][25], а также методом ДЭЯР в непрерывном режиме (cw-ENDOR) [26][27][28][29][30][31].…”

Section: экспериментальные результатыunclassified

Акцепторы III Группы С Мелкими И Глубокими Уровнями В Карбиде Кремния: Исследования Методами ЭПР И ДЭЯР

Ильин¹,

Успенская²,

Kramushchenko³

et al. 2018

Физика Твердого Тела

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Приведены результаты исследований акцепторов III группы (B, Al, Ga) в кристаллах карбида кремния с использованием наиболее информативных методов электронного парамагнитного резонанса и двойного электронно-ядерного резонанса и рассмотрены структурные модели акцепторов с мелкими уровнями и с глубокими уровнями. Наряду с данными, полученными ранее, добавлены исследования с использованием высокочастотных методов магнитного резонанса, позволивших обнаружить орторомбические отклонения от аксиальной симметрии для глубоких акцепторов, и проведен теоретический анализ, объясняющий наблюдаемые в экспериментах сдвиги g-факторов для глубоких акцепторов, обусловленные появлением орторомбических искажений, вероятно, вследствие наличия эффекта Яна−Теллера.

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“…Optically detected magnetic resonance (ODMR) is one of the most powerful and informative techniques for a study of spin-dependent processes [8][9][10][11]. It is based on the dependence of optical properties on the electron spin polarization of paramagnetic centres, which are involved in the optical pumping cycle or a competing spin-dependent non-radiative process.…”

Section: Introductionmentioning

confidence: 99%

The Gd–Ce Cross-Relaxation Effects in ODMR via Ce3+ Emission in Garnet Crystals

et al. 2016

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Electron paramagnetic resonance (EPR) in the ground state of Gd 3? ions in (LuGd) 3 Al 5 O 12 single crystals has been found by monitoring the Ce 3? photoluminescence intensity under circularly polarized excitation in the presence of the 35 GHz microwave field. Due to spin selection rules for optical transitions, the circularly polarized excitation allowed monitoring the populations of the Ce 3? ground-state spin sublevels, which can be changed at the EPR of Gd 3? due to GdCe cross relaxation.

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ODMR study of recombination processes in ionic crystals and silicon carbide

Cited by 32 publications

References 18 publications

Electronic structure of the deep boron acceptor in boron-doped6H-SiC

Electronic structure of the deep boron acceptor in boron-doped6H-SiC

Акцепторы III Группы С Мелкими И Глубокими Уровнями В Карбиде Кремния: Исследования Методами ЭПР И ДЭЯР

The Gd–Ce Cross-Relaxation Effects in ODMR via Ce3+ Emission in Garnet Crystals

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