Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Chen, Y.; Dudley, Michael; Liu, K. X.; Stahlbush, Robert E.

doi:10.1063/1.2734499

Cited by 27 publications

(19 citation statements)

References 9 publications

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“…18b mutual force [41]. Recently, stress-induced glide of BPDs forming an interfacial dislocation near the epilayer/substrate interface during 4H-SiC epitaxial growth was discovered by Zhang et al [42].…”

Section: Bpdsmentioning

confidence: 98%

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Tsuchida¹,

Ito²,

Kamata³

et al. 2009

Physica Status Solidi (b)

150

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This paper surveys extended defects in 4H‐SiC epilayers and reports recent results concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron microscopy, Nomarski optical microscopy and defect selective etching analysis are applied to investigate the nucleation and propagation of carrot defects, basal plane Frank‐type defects, polytype inclusions and basal plane dislocations (BPDs) in 4H‐SiC epitaxial growth. In the development of the 4H‐SiC fast epitaxial growth technique, a very high growth rate of up to 250 μm/h is obtained in a newly developed vertical hot‐wall‐type reactor under low system pressure using a H2 + SiH4 + C3H8 system. Good thickness and impurity doping uniformity are also obtained simultaneously over a large area, with the retention of a high growth rate. A 4H‐SiC epilayer virtually free from BPDs is obtained on a 4° off Si‐face substrate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Bpdsmentioning

confidence: 98%

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Tsuchida¹,

Ito²,

Kamata³

et al. 2009

Physica Status Solidi (b)

150

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“…Grazing-incidence SWBXT using pyramidal plane reflections has been used to record the defect structures in SiC epitaxial layers due to the reduced penetration depth of the X-rays in this geometry. 5 Previous simulations of grazing-incidence SWBXT images of elementary TSDs reported by Vetter exhibited a circular shape with dimensions about 20% smaller than the observed images. 9 Actually, the smaller size of the observed images of elementary TSDs actually makes shape discernment difficult but the asymmetric perimeter intensity distributions can still enable sense determination (see Ref.…”

Section: Introductionmentioning

confidence: 59%

“…The formation of these prismatic SFs prevents the formation of double SFs, which may be more detrimental to the device performance. 5 MPs are super screw dislocations with giant Burgers vectors along c-axis. The hollow-core is present to minimize the total energy via a balance between the strain energy and the surface energy of the hollow pipe, according to FrankÕs theory.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses

Chen

Dudley

Sanchez

et al. 2007

Journal of Elec Materi

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Detailed comparison has been drawn between synchrotron white beam X-ray topographic images of micropipes in 4H-SiC, recorded using pyramidal plane reflections in grazing-incidence geometry, and images simulated using the ray-tracing method. The simulations were carried out with and without the influence of surface relaxation effects. The images simulated in the absence of surface relaxation effects appear as white elliptical shaped features, canted to one side or other of the g-vector (depending on the dislocation sense), surrounded by a dark contrast perimeter which thickens at both ends of the major axis and which exhibits two fold symmetry axes parallel to the major and minor axes. On the other hand, on the images simulated taking into account the effects of surface relaxation, the features are again canted to one side or other of the g-vector (depending on the dislocation sense) but do not exhibit the same symmetry in that one of the sides of the oval shape is flattened (along the major axis) and the distribution of intensity around the perimeter no longer possesses the two fold symmetry axes parallel to the major and minor axes. While the details of the distribution of the dark perimeter contrast observed on the recorded images are not so easy to correlate with the simulated distributions, the sense of cant of the roughly elliptical white features on the observed images can be easily correlated with the simulations. Since the sense of cant has the same behavior as a function of dislocation sense for simulations carried out with and without surface relaxation, this provides a high level of confidence that the sense of cant of these features can be readily used to determine the senses of the micropipes.

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“…2b). As discussed in Chen et al, 13 once the PD passes through the TSD, the SF splits into two components (Fig. 2c) with a vertical prismatic fault nucleating in the region separating the two split SF components (Fig.…”

Section: Resultsmentioning

confidence: 92%

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Giles

Caldwell

Stahlbush

et al. 2010

Journal of Elec Materi

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To understand the nature of various extended defects and their impact on the electronic or optoelectronic characteristics of semiconductor devices, the investigation of spectral properties is required. However, electroluminescence spectroscopy does not provide spatial or structural information. The lack of such information can lead to incorrect assignment of a luminescence band and therefore misinterpretation of the nature of the emitting defect. Here we report on the collection and analysis of real-color and spectrally selective monochromatic electroluminescence (EL) images from 4H-SiC PiN diodes. The former provides the approximate spectral properties from the color of the various defects with high spatial resolution, while the latter enables simultaneous collection of both structural and spectral properties from extended defects, thereby assisting in providing the correct assignment of the various spectral features observed. This effort enabled the observation of the formation of a green EL emission located at C-core partial dislocations (PDs) that occurred during the stacking fault (SF) expansion process.

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Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Cited by 27 publications

References 9 publications

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

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