Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Tsuchida, Hidekazu; Ito, Masahiko; Kamata, Isaho; Nagano, Masahiro

doi:10.1002/pssb.200945056

Cited by 141 publications

(95 citation statements)

References 51 publications

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“…• substrates, [13][14][15] probably related to the interaction between macro-steps and BPDs 9 . Also the conversion of a BPD to TED is energetically favorable as discussed in detail in a reference.…”

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confidence: 99%

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Song

Chandrashekhar

Sudarshan

2014

ECS J. Solid State Sci. Technol.

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The growth of 4 • off-axis 4H-SiC epilayers by chemical vapor deposition is studied using dichlorosilane as the Si precursor in a chimney reactor. The unintentional and intentional nitrogen doping at various C/Si ratios and N 2 flow rates are investigated. The C/Si ratio has a significant influence on the growth rate, surface morphology, conversion of basal plane dislocations (BPDs), and generation of other defects (e.g., in-growth stacking faults and morphological defects). Addition of N 2 has no obvious influence on growth rate and BPD conversion. It is preferable to grow high quality n + epilayers at a C/Si ratio in the range of 1.3-1.8 along with the addition of a suitable amount of N 2 in consideration of high growth rate, good surface morphology, and low defect density. In this case, the conversion ratio of BPDs to threading edge dislocations is greater than 99.8% regardless of N 2 addition. Therefore >99.8% substrate BPDs can be buried in an n + buffer layer, which is beneficial to SiC bipolar power devices. No special treatment prior to, during or after the epigrowth is necessary. The epilayers with doping concentration all the way from p − (∼1e15 cm −3 ) to semi-insulating, then to n + (∼1e18 cm −3 ), can be achieved, giving a great range of flexibility in growth using dichlorosilane precursor. Further optimization of in-situ etching and growth conditions to eliminate step bunching has also been suggested. 4H-silicon carbide (4H-SiC) is a promising wide bandgap material for high power electronic devices, owing to its unique thermal and electrical properties such as high breakdown field, high thermal conductivity, and high electron saturation velocity.1,2 Chemical vapor deposition (CVD) is a well-developed technique adopted in semiconductor industry to produce high purity and high quality thin films.3 Homoepitaxial growth of SiC via the CVD technique is one of the key steps in the fabrication of high performance SiC devices. Currently, chloride-based CVD has attracted much interest to potentially replace the traditional silane based CVD for SiC epitaxial growth to reduce the Si droplet formation at high growth rates, because of the higher bonding energy of Si-Cl (400 kJ/mol) than SiSi (226 kJ/mol).4 Dichlorosilane (SiH 2 Cl 2 , DCS) is a gas (boiling point: 8.2• C) at room temperature. It has been demonstrated that using DCS and propane (C 3 H 8 ) as the precursors, high crystalline quality 8• off-axis SiC epilayers were achieved at a high growth rate (up to 100 μm/h). 5,6 At present, the standard off-axis angle of commercially available SiC substrates is lowered to 4• to reduce the material loss during substrate preparation from the crystal boules.Step-bunching is a typical surface feature of the epilayers grown on 4• off-axis substrates, resulting in increase in surface roughness. 7Morphological defects, specifically the triangular defects and inverted pyramids, are prone to be generated in epigrowth on low off-axis angle substrates. 8 Hence, determination of optimized growth conditions to produce SiC ...

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confidence: 99%

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Song

Chandrashekhar

Sudarshan

2014

ECS J. Solid State Sci. Technol.

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“…The knife-shaped contrasts were reported to represent the extended defects on the basal planes which were reported to be composed of 4 Frank partial dislocations each having 1/4[0001] Burgers vector with stacking faults on the (0001) basal plane between them. 7,19,20 In the topography image of the grown crystal taken under the condition #3 [ Fig. 3(c)], the TSDs (A and B ) in seed crystal as well as the extended defects on the basal planes (C and D ) in the grown layer were simultaneously recorded.…”

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confidence: 99%

“…Similar TSD conversion has been reported in the epitaxial growth of SiC by chemical vapor deposition (CVD). 19,20 However, the conversion ratio is as low as 1% in CVD within the growth of about 20 μm. 19 The difference between solution growth and CVD in the conversion ratio would be caused by the difference in the step height.…”

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confidence: 99%

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Harada¹,

Yamamoto²,

Seki³

et al. 2013

Apl Materials

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Evolution of threading screw dislocation (TSD) conversion during the solution growth of 4H-SiC on a vicinal crystal of 4H-SiC(0001) was investigated by synchrotron X-ray topography. Selecting appropriate X-ray wavelength and g vector, we can change the penetration of X-ray, and the dislocation behaviors with the different depth were successfully observed. Evidently TSDs parallel to the c-axis having c-component Burgers vector were changed into defects on the (0001) basal planes with the same Burgers vector as the TSDs, propagating to the [112¯0] step-flow direction by advancing macrosteps during the solution growth. The TSD conversions stochastically took place during the growth. The conversion rate was almost uniform and finally almost all TSDs were converted to the basal plane defects. The conversion rate was low at the very early stage of the growth, which implies that the macrosteps were not formed at the initial stage of the solution growth

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“…The edges of the triangle corresponding to the Frank partial dislocations on the basal plane exhibit knife-shaped topography images showing a white long body with a dark edge line at the right side toward the step-flow direction. The dark edge side of the topography image was confirmed to be a terminated side of the extra half plane [1,2], and the stacking fault area with 1/2 c[0001] displacement vector was clarified to be located between two partial dislocations at the right side and two partials at the left as shown in Fig. 4(c) by high-resolution TEM investigation for this defect.…”

Section: Resultsmentioning

confidence: 94%

“…Frank-type defects on a basal plane with four Frank partials, each with a 1/4 c[0001] Burgers vector (multilayer-type defects), can be generated by conversion of a 1c [0001] threading screw dislocation in the substrate during 4H-SiC epitaxial growth [1,2]. A long narrow triangle shows stacking fault area and two long edges exhibit the Frank partials in the defect.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

Kamata

Zhang

Tsuchida

2012

MSF

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Abstract. Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in wavelength (>650nm) was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.

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Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Cited by 141 publications

References 51 publications

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

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