Observation of the anomalous current–voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure

Abstract

Articles you may be interested inEffects of recombination current on the current-voltage characteristics in metal-InGaAs Schottky diodes A GaAs/n ϩ -In 0.2 Ga 0.8 As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about Ϫ3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage ͑V GS ϽϪ1.0 V͒ regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance ͑NDR͒ behavior is observed at the saturation regime of currentvoltage characteristics under higher gate-source bias ͑V GS уϪ1.0 V͒ condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect.

Multiple quantized switching behaviours (MQSB) of functional heterostructure-emitter bipolar transistors (HEBTs) with multiple carrier confinement heterostructures

“…Recently, with the rapid advance of semiconductor growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD), it has become possible to precisely control material composition and doping profile. The previously reported NDR switching structures included metal-insulator-semiconductors (MIS) [4,5], p-n junctions [6], superlattices [7], bulk barriers [8,9], quantum wells [10][11][12], and delta-doping superlattice structures [13]. In particular, transistors with the controllable NDR phenomena [14,15] are of great interest for a variety of potential applications due to their potential to greatly reduce circuit complexity.…”