Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Liu, Rong Chau; Liu, Wen Chau

doi:10.1016/s0026-2714(97)00063-2

Microelectronics Reliability

1998

DOI: 10.1016/s0026-2714(97)00063-2

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Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Rong Chau Liu

Wen Chau Liu

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Cited by 2 publications

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High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application

Tsai

2004

Solid-State Electronics

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Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Cited by 2 publications

References 12 publications

High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application

High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application

Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors

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