Abstract:In this paper we will demonstrate the interesting multiple quantized switching behaviours (MQSB), or the multiple negative differential resistance (MNDR) phenomena, resulting from the avalanche multiplication process and multiple carrier confinement effect of functional heterostructure-emitter bipolar transistors (HEBTs) under inverted operation mode. As the applied emitter-collector (E-C) bias V EC is high enough, electron-hole pairs would be generated by avalanche multiplication near the reverse biased emitt… Show more
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