Observation of temperature effect on electrical properties of novel Au/Bi0.7Dy0.3FeO3/ZnO/p-Si thin film MIS capacitor for MEMS applications

Bhatia, Deepak; Roy, Sandipta; Nawaz, S.; Meena, R. S.; Palkar, V. R.

doi:10.1016/j.mee.2016.11.001

Cited by 2 publications

(1 citation statement)

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“…ZnO and PZT films are usually used as piezoelectric layers in pMUTs [ 15 , 16 , 17 , 18 , 19 , 20 ]. Compared with that of PZT film the deposition process of ZnO film is simple and compatible with micromachining technology [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ]. In order to improve the properties of pMUT, Belgacem studied the influence of centred and ring top electrode on the coupling factor of pMUT with a circular piezoelectric composite diaphragm released by the expensive deep reactive ion etch (DRIE) process, and they found that when the PZT was removed outside the electrode this can improve the coupling factor [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film

Ren

Fan

et al. 2017

Sensors

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A square piezoelectric composite diaphragm was analyzed by the finite element method to enhance the sensitivity of a piezoelectric micromachined ultrasound transducer (pMUT). The structures of electrode and piezoelectric film were optimized and a centric electrode was designed to avoid the counteraction of stress in the centre and edges. In order to further improve the sensitivity; a pMUT with partially-etched piezoelectric film was adopted. The receive and transmit sensitivities of the pMUT were analyzed in details. The receive sensitivity of pMUT with partially-etched ZnO film is 3.3 dB or 6.8 dB higher than those with a centric and whole electrode, respectively; and the amplitude of a partially-etched ZnO film pMUT under a certain voltage is 5.5 dB and 30 dB higher than those with centric and whole electrode separately. Two pMUT-based ZnO films were fabricated by micromachining technology and their receive and transmit sensitivities were tested. The ZnO films deposited by direct current (DC) magnetron sputtering exhibit a densely packed structure with columnar crystallites. The test results show that the structure of the square diaphragm with partially-etched piezoelectric layer can significantly improve the transducer sensitivity. The receive sensitivity and transmit sensitivity are −238.35 dB (ref. 1 V/μPa) and 150.42 dB (ref. 1 μPa/V); respectively.

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