Observation of surface reaction layers formed in highly selective SiO2 etching

Matsui, Miyako; Tatsumi, Tetsuya; Sekine, Makoto

doi:10.1116/1.1383064

Cited by 71 publications

(41 citation statements)

References 8 publications

(7 reference statements)

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“…The carbon content found on the surface decreased abruptly with the sputtering time, indicating that the carbon polymer layer is very thin (Figure 4c,d). This thin carbon polymer layer on the etched surface was previously reported in Si-based oxide materials etched under fluorocarbon plasma [19,20,21]. Moreover, the fluorine was verified on both Y 2 O 3 and YF 3 coatings and the higher fluorine content was detected on the YF 3 surface (Figure 4c,d).…”

Section: Resultssupporting

confidence: 80%

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

et al. 2017

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Yttrium fluoride (YF3) and yttrium oxide (Y2O3) protective coatings prepared using an atmospheric plasma spraying technique were used to investigate the relationship between surface erosion behaviors and their nanoparticle generation under high-density plasma (1012–1013 cm−3) etching. As examined by transmission electron microscopy, the Y2O3 and YF3 coatings become oxyfluorinated after exposure to the plasma, wherein the yttrium oxyfluoride film formation was observed on the surface with a thickness of 5.2 and 6.8 nm, respectively. The difference in the oxyfluorination of Y2O3 and YF3 coatings could be attributed to Y–F and Y–O bonding energies. X-ray photoelectron spectroscopy analyses revealed that a strongly fluorinated bonding (Y–F bond) was obtained on the etched surface of the YF3 coating. Scanning electron microscopy and energy dispersive X-ray diffraction analysis revealed that the nanoparticles on the 12-inch wafer are composed of etchant gases and Y2O3. These results indicate that the YF3 coating is a more erosion-resistant material, resulting in fewer contamination particles compared with the Y2O3 coating.

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Section: Resultssupporting

confidence: 80%

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

et al. 2017

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“…The carbon content on the YF 3 surface decreased abruptly with sputtering time, indicating a very thin carbon polymer layer on the etched surface. This is because of interactions between the fluorocarbon plasma and Si-based materials, which generate carbon polymer and a SiF x O y reaction layer [ 15 ].…”

Section: Resultsmentioning

confidence: 99%

Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Wang

Lin

2018

Nanomaterials

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Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.

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“…In addition to knowledge provided by experimental studies, [1][2][3][4][5][6] the damage distribution needs to be quantitatively predicted by a numerical simulation taking into account plasma conditions and realistic surface reactions. This can help us determine how to reduce and control plasma-induced damage, which is useful for the highly selective etching of HAR contact holes, because observing the damage distribution at the side and bottom of such structures is very difficult.…”

mentioning

confidence: 99%

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Kuboi¹,

Tatsumi²,

Kobayashi³

et al. 2012

Appl. Phys. Express

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We have demonstrated an InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with a selectively regrown n þ -InGaAs source/drain formed by metal organic vapor-phase epitaxy. A 150-nm-long channel was fabricated using a dummy gate and by laterally buried regrowth in the channel undercut. The gate stack was formed after regrowth by replacing the dummy gate. The carrier density of the regrown layer was 4:9 Â 10 19 cm À3 . The maximum drain current at a drain voltage V d ¼ 1 V and a gate voltage V g ¼ 3 V was 0.93 mA/m and the maximum transconductance was 0.53 mS/m at V d ¼ 0:65 V. #

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Observation of surface reaction layers formed in highly selective SiO2 etching

Cited by 71 publications

References 8 publications

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

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