Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Wang, Weikai; Lin, Yu-Xiu; Xu, Yi-Jie

doi:10.3390/nano8110936

Cited by 19 publications

(9 citation statements)

References 18 publications

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“…Coatings 2020, 10, x FOR PEER REVIEW 5 of 10 plasma-treated Y2O3 film but largely changed the O 1S and F 1S contents of the as-grown Y2O3 film. Similar results were reported in a previous study of fluorocarbon plasma etching [25]. Figure 5 shows the XPS spectra of yttrium atoms in the as-deposited Y2O3 films and SF6 plasma-treated Y2O3 films before and after fluorocarbon plasma etching.…”

Section: Resultssupporting

confidence: 86%

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Wang

Liu

et al. 2020

Coatings

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Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.

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Section: Resultssupporting

confidence: 86%

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Wang

Liu

et al. 2020

Coatings

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“…Among ceramic coating materials for preventing plasma corrosion, Y 2 O 3 is widely used for inner parts of the chamber because of its low etching rate and low chemical reactivity. Recently, YOF and YF 3 have also drawn attention as ceramic coating materials for parts owing to their ability to suppress chemical reactions with fluoridated gases such as CF 4 and NF 3 [8][9][10][11][12][13]. Nevertheless, there have been few reports about the behavior of contamination particles by plasma etching [14].…”

Section: Introductionmentioning

confidence: 99%

Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Song

Choi

et al. 2019

Coatings

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The internal coatings of chambers exposed to plasma over a long period of time are subject to chemical and physical damage. Contamination particles that are produced by plasma damage to coatings are a major contribution to poor process reliability. In this study, we investigated the behavior of contamination particles produced from plasma damage to Y2O3 and YF3 protective coatings, which were applied by an aerosol deposition method. The coating materials were located at the powered electrode, the grounded electrode, and the grounded wall, which were exposed to a NF3 plasma. The mass loss at the powered electrode, which was exposed to the NF3 plasma etching under an applied bias, showed that the YF3 etching rate was higher than that of Y2O3. Conversely, the mass of coating increased at the grounded electrode and the grounded wall, which were exposed to NF3 plasma etching under zero bias. The mass of the Y2O3 coating increased more than that of the YF3 coating. X-ray photoelectron spectroscopy analysis showed that the Y2O3 coating corroded to YOxFy in the NF3 plasma, and YF3 existed as YFx. Light scattering sensor analysis showed that the YF3 coating produced fewer contamination particles than did the Y2O3 coating.

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“…When fluoride compounds have been formed by the reaction of coating materials and fluorine, the nonvolatile byproduct may become a contaminant source in the wafer production process. The behavior of fluorine plasma chemistry also depends on the type of yttria and the structure of the material composition in plasma etching [14][15][16].…”

Section: Methodsmentioning

confidence: 99%

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

2021

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Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

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Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Cited by 19 publications

References 18 publications

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

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