Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Abstract

<jats:p>Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.</jats:p>

High-contrast multi-surface imaging of latent fingerprints using color-tunable YOF:Tb3+,Eu3+ ultrafine nanophosphors with high quantum yield

“…The two sets of doublet peaks can be attributed to the two different environments experienced by Y 3+ ions due to the Y–F and Y–O bonding, respectively. 49 The F 1s signals were fitted by a single peak at 685.2 eV corresponding to the lattice fluorine. The signals obtained for the O 1s core levels were fitted with three peaks.…”

Bismuth and Vanadium-Substituted Yttrium Phosphates for Cool Coating Applications

“…The valence energy state of metal ions is identified based on their binding energy locations. The Y 3d state was recognized by the presence of peaks at 157.17 and 158.88 eV corresponding to 3d 5/2 and 3d 3/2 . Phosphorous in its +5 oxidation state was identified by the existence of a peak at 133.32 eV, suggesting the presence of the P 2p energy level of the cation.…”

“…The Y 3d state was recognized by the presence of peaks at 157.17 and 158.88 eV corresponding to 3d 5/2 and 3d 3/2 . 41 Phosphorous in its +5 oxidation state was identified by the existence of a peak at 133.32 eV, suggesting the presence of the P 2p energy level of the cation. From the figure, one could confirm the presence of the V 2p state by observing the binding energy at 517 eV corresponding to the V 2p 1/2 level and 524.53 eV corresponding to the V 2p 3/2 level.…”

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

“…When fluoride compounds have been formed by the reaction of coating materials and fluorine, the nonvolatile byproduct may become a contaminant source in the wafer production process. The behavior of fluorine plasma chemistry also depends on the type of yttria and the structure of the material composition in plasma etching [14][15][16].…”