Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Abstract

We have demonstrated an InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with a selectively regrown n þ -InGaAs source/drain formed by metal organic vapor-phase epitaxy. A 150-nm-long channel was fabricated using a dummy gate and by laterally buried regrowth in the channel undercut. The gate stack was formed after regrowth by replacing the dummy gate. The carrier density of the regrown layer was 4:9 Â 10 19 cm À3 . The maximum drain current at a drain voltage V d ¼ 1 V and a gate voltage V g ¼ 3 V was 0.93 mA/m and the maximum transconductance was 0.53 mS/m at V d ¼ 0:65 V. #

Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation

“…6 Results from a voxel-slab model, developed to investigate contact hole etching in SiO 2 , indicated that physical damage was reduced by maintaining a critical thickness of the overlaying polymer. 17,34 Bowing during the etching of HAR features was found to result from excessive fluxes of F and O radicals to the sidewalls according to the results of a line-of-sight profile simulator. 35 A model addressing pattern deformation and experimental measurements by atomic force microscopy indicated that the ratio of line width roughness to line edge roughness decreases with increasing etch depth, and the depth at which twisting occurs is shallower for a lower bias power.…”

“…These effects can be mitigated by carefully controlling the overlying polymer thickness through the gas flow rate and the over-etch time. 17,18 While being an etchant and providing activation energy, ions are also typically neutralized when striking surfaces on the top and inside of the feature. In doing so, positive charge is deposited on the surfaces.…”

Review and future perspective of feature scale profile modeling for high-performance semiconductor devices

“…Kuboi et al 22 . also demonstrated the time variation of damage distribution in the Si substrate during the SiO2 hole etching along with over-etching time using the string-slab model 21 as shown in Fig. 3.…”

“…To calculate the damage depth distribution from the etched surface as well as the feature scale profile, a 2D string-slab model, an improved string model, was proposed by Kuboi et al 21 , 22 Figure 3. shows a schematic of the model with the surface reaction for SiO2 etching caused by ions and radicals.…”

“…Fig.4Comparison simulation results with experiments of ER, selectivity, and feature profiles. Solid and dotted lines in two graphs represent simulation results and experiments, respectively 21. …”