We report measurements of synchronization in two nanomechanical beam oscillators coupled by a mechanical element. We charted multiple regions of frequency entrainment or synchronization by their corresponding Arnold's tongue diagrams as the oscillator was driven at subharmonic and rational commensurate frequencies. Demonstration of multiple synchronized regions could be fundamentally important to neurocomputing with mechanical oscillator networks and nanomechanical signal processing for microwave communication.
We report low-temperature measurements of dissipation in megahertz-range, suspended, singlecrystal nanomechanical oscillators. At millikelvin temperatures, both dissipation (inverse quality factor) and shift in the resonance frequency display reproducible features, similar to those observed in sound attenuation experiments in disordered glasses and consistent with measurements in larger micromechanical oscillators fabricated from single-crystal silicon. Dissipation in our single-crystal nanomechanical structures is dominated by internal quantum friction due to an estimated number of roughly 50 two-level systems, which represent both dangling bonds on the surface and bulk defects.
Perovskite-related strontium orthoferrite, SrFeO3−δ, has been fluorinated by a low temperature reaction with poly(vinylidene fluoride) to give the compound SrFeO2F. X-ray powder diffraction shows that fluorination leads to an expansion of the unit cell which is consistent with partial replacement of oxygen by fluorine and consequent reduction in the oxidation state of iron. Magnetometry experiments in the temperature range 10–400 K showed small aligned moments (0.003 ± 0.000 05 μB per Fe3+ ion at 2 T and 300 K), indicating the absence of ferro- or ferrimagnetism. The 57Fe Mössbauer spectra recorded at temperatures below about 300 K show broadened, but unsplit, sextet patterns whilst spectra recorded above this temperature show clear splitting of the sextet structure and a magnetic ordering temperature of 685 ± 5 K. A model related to the pattern of substitution by fluorine on the octahedral arrangement of oxygen sites around iron is proposed in which SrFeO2F undergoes a magnetic transition at about 300 K from a low temperature state with random spin directions to an antiferromagnetic state.
M-doped zinc oxide (ZnO) (M 5 Al and/or Ni) thermoelectric materials were fully densified at a temperature lower than 10001C using a spark plasma sintering technique and their microstructural evolution and thermoelectric characteristics were investigated. The addition of Al 2 O 3 reduced the surface evaporation of pure ZnO and suppressed grain growth by the formation of a secondary phase. The addition of NiO promoted the formation of a solid solution with the ZnO crystal structure and caused severe grain growth. The co-addition of Al 2 O 3 and NiO produced a homogeneous microstructure with a good grain boundary distribution. The microstructural characteristics induced by the co-addition of Al 2 O 3 and NiO have a major role in increasing the electrical conductivity and decreasing the thermal conductivity, resulting from an increase in carrier concentration and the phonon scattering effect, respectively, and therefore improving the thermoelectric properties. The ZnO specimen, which was sintered at 10001C with the co-addition of Al 2 O 3 and NiO, exhibited a ZT value of 0.6 Â 10 À3 K À1 , electrical conductivity of 1.7 Â 10 À4 X À1 . m À1 , the thermal conductivity of 5.16 W . (m . K) À1 , and Seebeck coefficient of À425.4 lV/K at 9001C. The ZT value obtained respects the 30% increase compared with the previously reported value, 0.4 Â 10 À3 K À1 , in the literature. J ournal
Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and approaching 100), maintaining critical dimensions (CDs) while eliminating or diminishing twisting, contact-edge-roughening, and aspect ratio dependent etching (ARDE) becomes challenging. Integrated reactor and feature scale modeling was used to investigate the etching of HAR features in SiO 2 with ARs up to 80 using tri-frequency capacitively coupled plasmas sustained in Ar/C 4 F 8 /O 2 mixtures. In these systems, the fluxes of neutral radicals to the wafer exceed the fluxes of ions by 1-2 orders of magnitude due to lower threshold energies for dissociation compared with ionization. At low ARs (<5), these abundant fluxes of CF x and C x F y radicals to the etch front passivate the oxide to form a complex which is then removed by energetic species (ions and hot neutrals) through chemically enhanced reactive etching, resulting in the formation of gas phase SiF x , CO x , and COF. As the etching proceeds into higher ARs, the fractional contribution of physical sputtering to oxide removal increases as the fluxes of energetic species to the etch front surpass those of the conduction constrained CF x and C x F y radicals. The instantaneous etch rate of oxide decreases with increasing aspect ratio (ARDE effect) due to decreased fluxes of energetic species and decreased power delivered by these species to the etch front. As the etch rate of photoresist (PR) is independent of AR, maintaining CDs by avoiding undercut and bowing requires high SiO 2-over-PR selectivity, which in turn requires a minimum thickness of the PR at the end of etching. Positive ions with narrow angular distributions typically deposit charge on the bottom of low AR features, producing a maximum in positive electric potential on the bottom of the feature. For high AR features, grazing incidence collisions of ions on sidewalls depositing charge produce electric potentials with maxima on the sidewalls (as opposed to the bottom) of the feature.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.