2013
DOI: 10.1038/nnano.2013.121
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Observation of room-temperature ballistic thermal conduction persisting over 8.3 µm in SiGe nanowires

Abstract: In ballistic thermal conduction, the wave characteristics of phonons allow the transmission of energy without dissipation. However, the observation of ballistic heat transport at room temperature is challenging because of the short phonon mean free path. Here we show that ballistic thermal conduction persisting over 8.3 µm can be observed in SiGe nanowires with low thermal conductivity for a wide range of structural variations and alloy concentrations. We find that an unexpectedly low percentage (∼0.04%) of ph… Show more

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Cited by 164 publications
(165 citation statements)
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“…We observe that the thermal resistance in the uncorrelated case is significantly more length dependent than in the correlated case where the weak length dependence suggests ballistic heat conduction and is reminiscent of the experimental results observed in Ref. [35]. Qualitatively, the length dependence is also similar to that in Fig.…”
Section: Discussionsupporting
confidence: 85%
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“…We observe that the thermal resistance in the uncorrelated case is significantly more length dependent than in the correlated case where the weak length dependence suggests ballistic heat conduction and is reminiscent of the experimental results observed in Ref. [35]. Qualitatively, the length dependence is also similar to that in Fig.…”
Section: Discussionsupporting
confidence: 85%
“…We also interpret the recent findings of ballistic heat conduction in SiGe-alloy nanowires in Ref. [35] in light of our results.…”
Section: Introductionsupporting
confidence: 89%
“…Recently, we have also recognized the issues mentioned above and directly measured the length-dependent κ of homogeneouslyalloyed SiGe nanowires and heterogeneously-interfaced Si-Ge core-shell nanowires. 14,16 Surprisingly, the l of these SiGe nanowires was found to be 5∼8µm, which is nearly 1000 times longer than that predicted by some theories. 17 Interestingly, the diameter-dependent of κ of the SiGe nanowires displays a much weaker dependence than those observed in Si or Ge nanowires.…”
mentioning
confidence: 85%
“…So far only a few experiments have followed this guideline to study l's. [13][14][15][16] Alvarez-Quintana et al studied thickness-dependent cross-plane κ of germanium-on-insulator wafer and estimated the l ∼ 20nm. 13 Johnson et al employed laserinduced transient grating method to study in-plane κ of Si membranes and found the κ deviates from diffusive behavior at several micrometers, suggesting l > 1µm.…”
mentioning
confidence: 99%
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