Observation of electron standing waves in Mg by tunneling

Jaklevic, R. C.; Lambe, John; Mikkor, M.; Vassell, W. C.

doi:10.1016/0038-1098(72)90380-8

Cited by 24 publications

(2 citation statements)

References 4 publications

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“…Even if E , passed into higher sub-bands it is not clear why the conductance should show a strong decrease. Similar difficulties apply to other explanations based on quantisation, for example the question of commensurability of the quantised wavefunction with variations in the width of the conducting channel, as found in tunnelling experiments (Jaklevic et al 1972). In addition, this does not explain why the intermediate structure appears with decreasing temperature.…”

Section: Letter To the Editormentioning

confidence: 85%

Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites

Islam

Priya

2006

jjap

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A new effect has been observed at low temperatures when conduction is restricted to two dimensions in an n-type GaAs impurity band. When the carrier concentration is less than 10" cm-2 the conductance is found to oscillate as a function of carrier concentration. The oscillations can be resolved into simple series with the minima periodic functions of the mean electron separation. Suppression of the main series and enhancement of a subsidiary series is achieved by increasing the electric field responsible for transport; this results in differential negative resistance at certain carrier concentrations. The effect may possibly arise from, an ordering of the electrons by Coulomb repulsion, although it is difficult to envisage how this can happen in a random array of donors and we have at present no model to explain the effect.

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Section: Letter To the Editormentioning

confidence: 85%

Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites

Islam

Priya

2006

jjap

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“…1). They have also observed the effect in Mg films [2], and Jaklevic and Lambe [3] have studied the dependence of the effect on strain in the films.…”

Section: Introductionmentioning

confidence: 99%

Resonant tunnelling into a size‐quantised metal film

Cottey

1975

Physica Status Solidi (b)

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The theory of resonant tunneling thr0ug.h a thin oxide layer into a size-quantised metal film has hitherto been given only by modelling the metal film as a free-electron well with infinite pot,ential barriers a t the surface. It i.s shown that the essential feature of the theory, namely the "bunching of commensurate energy levels near the middle of the Brilloiiin zone", is retained if allowance is made for the lattice potential, for a finite surface potential, and for relaxation of the surface layers of atoms. There is, however, a uniform displacement of the energy levels, and this has an influence on the phase of the observed oscillations of conductance versus bias.Bisher wurde die Theorie des resonanten Tunnelns durch eine diinne Oxidschicht in eine ,,size"-quantisierte Metallschicht nur durch das Model1 der Metallschicht als Potentialtopf fur freie Elektronen mit unendlichen Potentialbarrieren an der Oberflache gegeben. Es wird gezeigt, daB das wesentliche Merkmal der Theorie, namlich die ,,Biindelung von kommensurablen Energieniveaus in der Niihe des Zentrums der Brillouin-Zone" erhalten bleibt, wenn das Gitterpotential, ein endliches Oberflachenpotential und die Relaxation von Oberflachenschichten der Atome beriicksichtigt werden. Es existiert jedoch eine einheitliche Verschiebung der Energieniveaw und dies hat einen EinfluS auf die Phase der beobachteten Oszillationen der Leitfahigkeit mit der Vorspannung.

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Quantum size effect in SnTe observed by tunnel experiments

Altwein

Finkenrath

1975

Physica Status Solidi (b)

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In SnTe-Al,O,-A1 tunnel junctions with size quantization of the electron states in the SnTe electrode, oscillations of the 2nd derivative of the I ( U ) characteristics were observed a t 4K. From this it was possible to determine a series of points of theE(k) relation perpendicular t o the film plane in a range of 5100 meV around the Fermi energy. The results are in agreement with values calculated from band structure data. I n SnTe-Al,O,-Al-Tunneldioden mit Dickenquantisierung der Elektronenzustinde in der SnTe-Elektrode wurden bei 4 K Oszillationen in der zweiten Ableitung der I ( U ) -Kennlinien beobachtet. Daraus konnte der E(k)-Verlauf parallel zur Schichtnormale im Bereich von & 100 meV um die Fermi-Energie punktweise, in ubereinstimmung mit den Ergebnissen theoretischer Bandstrukturberechnungen, bestimmt werden.

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Observation of electron standing waves in Mg by tunneling

Cited by 24 publications

References 4 publications

Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites

Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites

Resonant tunnelling into a size‐quantised metal film

Quantum size effect in SnTe observed by tunnel experiments

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Observation of electron standing waves in Mg by tunneling

Cited by 24 publications

References 4 publications

Annealing and Aging Effect in 0.95 Pb(Zr0.52Ti0.48)O3–0.05 NiFe1.9Mn0.1O4 Particulate Magnetoelectric Composites

Annealing and Aging Effect in 0.95 Pb(Zr0.52Ti0.48)O3–0.05 NiFe1.9Mn0.1O4 Particulate Magnetoelectric Composites

Resonant tunnelling into a size‐quantised metal film

Quantum size effect in SnTe observed by tunnel experiments

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Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites

Annealing and Aging Effect in 0.95 Pb(Zr_0.52Ti_0.48)O₃–0.05 NiFe_1.9Mn_0.1O₄ Particulate Magnetoelectric Composites