Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Banihashemian, Seyedeh Maryam; Hajghassem, Hassan; Aliahmadi, Majidreza; Mohtashamifar, Mansor; Mosakazemi, Seyed Mohamadhosein

doi:10.3390/s100201012

Cited by 13 publications

(5 citation statements)

References 15 publications

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“…The metal alloys like Au-In, In-Sn, and so on showed rectifying behavior (Angelescu and Kleps 1998). The alloyed PtSi/porous Si contact shows a good ohmic characteristic with a low contact resistance (Ichinohe et al 1996) but the PtSi/PSi/PtSi structure produces a nonlinear relation for carrier transport as confirmed Downloaded by [United Arab Emirates University ] at 03:54 27 June 2016 by I-V curve measurement (Banihashemian et al 2010). Au/porous Si contact shows the Schottky behavior with a high resistance, even under the forward bias.…”

Section: Ohmic and Rectifying Behavior Of M-psi Contactssupporting

confidence: 52%

The Mechanism of Metal-Assisted Etching of Silicon

2016

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

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Section: Ohmic and Rectifying Behavior Of M-psi Contactssupporting

confidence: 52%

The Mechanism of Metal-Assisted Etching of Silicon

2016

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

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“…AFM scans were taken at 512‐ × 512‐pixel resolution and produced topographic images of the samples in which the brightness of features increases as a function of height. Typical scanning parameters have been described elsewhere (Banihashemian et al,2010).…”

Section: Methodsmentioning

confidence: 99%

BD PuraMatrix peptide hydrogel as a culture system for human fetal Schwann cells in spinal cord regeneration

Moradi

Bahktiari

Joghataei

et al. 2012

J of Neuroscience Research

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BD PuraMatrix peptide hydrogel, a three-dimensional cell culture model of nanofiber scaffold derived from the self-assembling peptide RADA16, has been applied to regenerative tissue repair in order to develop novel nanomedicine systems. In this study with PuraMatrix, self-assembling nanofiber scaffold (SAPNS) and Schwann cells (SCs) were isolated from human fetal sciatic nerves, cultured within SAPNS, and then transplanted into the spinal cord after injury (SCI) in rats. First, the peptide nanofiber scaffold was evaluated via scanning electron microscopy and atomic force microscopy. With phase-contrast microscopy, the appearance of representative human fetal SCs encapsulated in PuraMatrix on days 3, 5, and 7 in 12-well plates was revealed. The Schwann cells in PuraMatrix were cultured for 2 days, and the SCs had active proliferative potential. Spinal cord injury was induced by placing a 35-g weight on the dura of T9-T10 segments for 15 min, followed by in vivo treatment with SAPNS and human fetal SCs (100,000 cells/10 μl/injection) grafted into spinal cord 7 days after SCI. After treatment, the recovery of motor function was assessed periodically using the Basso, Beattie, and Bresnahan scoring system. Eight weeks after grafting, animals were perfusion fixed, and the survival of implanted cells was analyzed with antibody recognizing SCs. Immunohistochemical analysis of grafted lumber segments at 8 weeks after grafting revealed reduced asterogliosis and considerably increased infiltration of endogenous S100(+) cells into the injury site, suggesting that PuraMatrix may play an important role in the repair observed after SAPNS and human fetal SC transplantation.

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“…However, a few studies have performed electron transport mechanism in PtSi layer on a porosified substrate. According to the published results [1, 14], room temperature operability of PtSi/porous Si is because of the single‐electron tunnelling (SET) or Coulomb blockade effect that is concluded from small depletion capacitance of this Schottky barrier. The study of such effects opens ways for a better understanding of small‐scale physics and electronics and could possibly lead in viable low power and fast devices in high‐density circuits.…”

Section: Introductionmentioning

confidence: 99%

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

Mehrara¹,

Raissi²,

Khaje³

2015

IET Circuits, Devices & Systems

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The authors report on Coulomb blockade effect in the PtSi/porous Si Schottky barrier. A model of two-dimensional multi-tunnelling junction (2D-MTJ) can explain the blockade characteristic of this barrier. Using the SIMON simulator, the electrical characteristics of the proposed model were investigated. The results show that simulated current-voltage curves achieve a reasonable fit with the measured data and the present model can be used to study the PtSi/porous Si Schottky barrier behaviour. In accordance with both the studies, Coulomb blockade phenomenon is observed in current oscillation and single-electron effect of this device at low temperatures (5 K) is justified using the 2D-MTJ model. In addition, it indicates that by increasing the current value with temperature and for high drain voltages, PtSi/porous Si Schottky barrier behaves like a single island single-electron tunnelling (SET) junction as previously reported by Raissi et al.

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Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Cited by 13 publications

References 15 publications

The Mechanism of Metal-Assisted Etching of Silicon

The Mechanism of Metal-Assisted Etching of Silicon

BD PuraMatrix peptide hydrogel as a culture system for human fetal Schwann cells in spinal cord regeneration

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

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