2011
DOI: 10.1109/mmm.2010.940103
|View full text |Cite
|
Sign up to set email alerts
|

NVNA Techniques for Pulsed RF Measurements

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
9
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
4
2

Relationship

1
5

Authors

Journals

citations
Cited by 16 publications
(9 citation statements)
references
References 22 publications
0
9
0
Order By: Relevance
“…Recently, high‐frequency nonlinear measurement systems have gained increasing market with the development of large signal network analyzers, like the Keysight nonlinear vector network analyzer (NVNA) and Rohde&Schwarz ZVA . Such instruments are typically capable of measuring both the amplitude and the phase of all significant harmonics of both input and output traveling waves of the active device under nonlinear operation.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Recently, high‐frequency nonlinear measurement systems have gained increasing market with the development of large signal network analyzers, like the Keysight nonlinear vector network analyzer (NVNA) and Rohde&Schwarz ZVA . Such instruments are typically capable of measuring both the amplitude and the phase of all significant harmonics of both input and output traveling waves of the active device under nonlinear operation.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7] Recently, high-frequency nonlinear measurement systems have gained increasing market with the development of large signal network analyzers, like the Keysight nonlinear vector network analyzer (NVNA) and Rohde&Schwarz ZVA. [8][9][10]…”
mentioning
confidence: 99%
“…Customized measurements test benches like LSNA [5], [6] NVNA [7] have been developed to measure pulsed RF CW time-domain voltage and current waveforms at both ports of non-linear devices. These instruments measure only the CW signal and its associated harmonics within the pulse.…”
Section: Introductionmentioning
confidence: 99%
“…Pulsed bias conditions are commonly employed [1], [2] in the characterization of semiconductor devices [3], [4], either to mimic isothermal operation [5], [6], [7], or to measure the device under test (DUT) in bias regimes, which are otherwise unobtainable (i.e., outside the safe device operating area). Typically, the hardware configuration, i.e., connecting cables, wafer probes, bias-tees, together with the loading provided by the DUT itself, determines the minimum duration of the pulses that can be effectively applied to the device, while retaining a reasonable shape of the waveform.…”
Section: Introductionmentioning
confidence: 99%