“…Pulsed bias conditions are commonly employed [1], [2] in the characterization of semiconductor devices [3], [4], either to mimic isothermal operation [5], [6], [7], or to measure the device under test (DUT) in bias regimes, which are otherwise unobtainable (i.e., outside the safe device operating area). Typically, the hardware configuration, i.e., connecting cables, wafer probes, bias-tees, together with the loading provided by the DUT itself, determines the minimum duration of the pulses that can be effectively applied to the device, while retaining a reasonable shape of the waveform.…”