Numerical Study of Temperature and Electric Field Effects on the Total Optical Absorption Coefficient in the Presence of Optical Inter-Conduction-Subband Transitions in InGaN/GaN Single Parabolic Quantum Wells

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

“…Within the regions of the SGQW quantum structure, their definitions are as follows [ 54 ]: where is the pressure-dependent effective mass; according to theory, it is given by the following expression [ 50 ]: where m 0 is the free electron mass and is the energy-related momentum matrix element obtained by the previous equation without pressure at , with . The numerical values of those parameters are and [ 34 ]. Furthermore, for the heavy holes, we employed effective mass values that are independent of pressure.…”

“…The numerical values of those parameters are C(GaN) = 14.7 eV and C(InN) = 15.50 eV [34]. Furthermore, for the heavy holes, we employed effective mass values that are independent of pressure.…”

“…Minimizing spectral line broadening, influenced by factors like indium composition fluctuations and interface roughness, is essential for applications requiring narrow linewidths. Temperature dependence affects carrier dynamics, and achieving optical gain in InGaN/GaN QWs is crucial for their use in semiconductor lasers [33,34]. Ongoing research actively addresses challenges such as the "green gap" and material degradation, focusing on new designs and manufacturing techniques to enhance the efficiency and reliability of InGaN/GaN QWs in practical optoelectronic devices [35].…”

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

“…To date, there has been limited research on recombination lifetime in the presence of impurities and the combined influence of electric and magnetic fields. Building on our prior investigations into InGaN/GaN heterostructures (QWs) [33][34][35][36], our goal is to explore the dynamic behavior of radiative recombination lifetime under various excitation conditions via theoretical calculations and numerical modeling. Recognizing the limitations of assuming a constant radiative lifetime, our study addresses this knowledge gap via a theoretical and simulation investigation, enhancing the accuracy of optical property analyses in semiconductor materials, particularly in the context of optoelectronic device research.…”