Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

Abstract

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

“…This equation is calculated within the framework of both the one-band parabolic theory and the effective mass approach. It has been numerically solved using the finite element method (FEM) due to the increased complexity arising from the inclusion of the Coulombian term (impurity), rendering it almost analytically unsolvable [ 36 , 37 , 38 ]. where is the electron charge and , denotes the electron–impurity distance, while represents the dielectric constant of the vacuum; and are the electron’s effective mass and the relative dielectric constant, respectively, both contingent upon the pressure, composition, and displacement of the particle.…”

“…Accuracy depends on factors such as the complexity of the problem, choices of numerical parameters, and computing resources, unlike conventional methods such as perturbative and variational techniques. It is important to note that, for the determination of energy levels and their corresponding wave functions, we consider the following boundary conditions [ 23 , 38 , 57 , 58 , 59 ]: …”

“…Consequently, for k values ranging from 0 to N, the corresponding mesh nodes for a single quantum well (QW) can be determined as follows: the left barrier is positioned at , the well region is located at , and the right barrier is situated at . Using the finite element method (FEM), we computed the first and second derivative wave functions [ 38 ]. …”

“…This equation is calculated within the framework of both the one-band parabolic theory and the effective mass approach. It has been numerically solved using the finite element method (FEM) due to the increased complexity arising from the inclusion of the Coulombian term (impurity), rendering it almost analytically unsolvable [36][37][38].…”