Numerical Study of Energy Capability of Si/SiC LDMOSFETs

Abstract

Abstract. A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-µs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area.