Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Tasli, P.; Sarıkavak, B.; Atmaca, G.; Elibol, Kenan; Kuloglu, A.F.; Li̇şesi̇vdi̇n, S. B.

doi:10.1016/j.physb.2010.06.049

Cited by 10 publications

(6 citation statements)

References 26 publications

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“…Nowadays, the group III nitrides are being actively investigated for their promising potentialities in optoelectronic devices of the visible/ultraviolet spectral range 1 2 3 . InN, AlN and their solution are a little new compared with other group III nitrides, but are now attracting much attention as potential materials for light emitting diodes (LEDs) and laser diodes (LDs) 4 5 .…”

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confidence: 99%

The immiscibility of InAlN ternary alloy

Zhao

et al. 2016

Sci Rep

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We have used two models based on the valence force field and the regular solution model to study the immiscibility of InAlN ternary alloy, and have got the spinodal and binodal curves of InAlN. Analyzing the spinodal decomposition curves, we obtain the appropriate concentration region for the epitaxial growth of the InN-AlN pseudobinary alloy. At a temperature most common for the epitaxial growth of InAlN (1000 K), the solubility of InN is about 10%. Then we introduce the mismatch strain item into the Gibbs free energy, and the effect of different substrates is taken into consideration. Considering Si, Al2O3, InN, GaN, AlN as a substrate respectively, it is found that all the five systems are stabilized with the upper critical solution temperature largely reduced. Finally, InN and GaN are potential substrates for In-rich InAlN, while AlN and GaN substrates are recommended in the Al-rich region. Si and Al2O3 may be ideal substrates for thin InAlN film.

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confidence: 99%

The immiscibility of InAlN ternary alloy

Zhao

et al. 2016

Sci Rep

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“…The steps of the simulation procedure, for systems like this study's, were given elsewhere [15]. The results are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

Sarikavak‐Lisesivdin

Li̇şesi̇vdi̇n

Özbay

2013

Current Applied Physics

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x 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin In x Ga 1Àx N back-barrier and the surrounding layers.

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“…13 This ultrathin barrier structure has many important features such as observing the short-channel effect and high transconductance in a HEMT structure. 14 Importantly, in addition to highly used AlGaN barrier layers, the InAlN barrier layer can be grown as lattice matched with the GaN buffer layer only for 17%-18% of In mole fraction. The possible structural dislocations causing lattice mismatch may be eliminated owing to the strained barrier layer.…”

Section: Introductionmentioning

confidence: 99%

“…Ostermaier et al proposed an ultrathin barrier GaN‐based heterostructure with a 1‐nm InAlN barrier layer and 1‐nm AlN interlayer and 6‐nm highly doped GaN cap layer 13 . This ultrathin barrier structure has many important features such as observing the short‐channel effect and high transconductance in a HEMT structure 14 . Importantly, in addition to highly used AlGaN barrier layers, the InAlN barrier layer can be grown as lattice matched with the GaN buffer layer only for 17%–18% of In mole fraction.…”

Section: Introductionmentioning

confidence: 99%

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 Â 10 8 cm À2 for Sample B with a lattice-matched In 0.17 Al 0.83 N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness.The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

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Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses

Cited by 10 publications

References 26 publications

The immiscibility of InAlN ternary alloy

The immiscibility of InAlN ternary alloy

The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

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