The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

Sarikavak‐Lisesivdin, B.; Li̇şesi̇vdi̇n, S. B.; Özbay, Ekmel

doi:10.1016/j.cap.2012.07.012

Cited by 3 publications

(3 citation statements)

References 21 publications

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“…Figure 2 shows (0002) the diffraction patterns of the studied ultrathin AlN/GaN and In 0.17 Al 0.83 N/GaN structures that have different barriers and thicknesses. AlN and GaN peaks are only shown; the diffraction peak of the InAlN barrier layer is not obtained because of its ultrathin thickness 33 . The (002) diffractions of GaN and AlN materials of the reference sample are shifted to lower diffraction angles due to compressive strain in structure.…”

Section: Resultsmentioning

confidence: 99%

“…After the substrate cleaning, the 15-nm AlN nucleation layer was grown at an LT of 770 C to increase the lattice match between GaN and sapphire. AlN buffer layer with 300-nm thickness was grown on the AlN nucleation layer 33 The (002) diffractions of GaN and AlN materials of the reference sample are shifted to lower diffraction angles due to compressive strain in structure. As it is widely known, the AlN interlayer reduces alloy scattering of the mobility of two-dimensional electron gas (2DEG), but in most cases, it may bring additional compressive strain to the lattice.…”

Section: Experimental Techniquesmentioning

confidence: 99%

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A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 Â 10 8 cm À2 for Sample B with a lattice-matched In 0.17 Al 0.83 N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness.The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Techniquesmentioning

confidence: 99%

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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show abstract

“…Photonic crystal enhanced solar cells aiming to enhance the efficiency of thin film solar cells by the mechanisms of optical path increase, light trapping, and optical impedance matching have been proposed and studied in the literature mostly for silicon and germanium materials [22,23]. Our group has been working on the growth of InGaN heterostructures [24][25][26]. Previously, we proposed a solar cell design, where the optical absorption from a thin InGaN active layer was enhanced by a photonic crystal etched into the top surface [27].…”

Section: Introductionmentioning

confidence: 99%