Numerical simulation and performance optimization of Sb2S3 solar cell with a hole transport layer

Xiao, Youpeng; Wang, Huaiping; Kuang, Huijuan

doi:10.1016/j.optmat.2020.110414

Cited by 68 publications

(25 citation statements)

References 37 publications

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“…This result may be due to the boost of recombination of the photogenerated carriers before reaching the external circuit at the high defect density. [ 52,80 ] V oc is decreased drastically from 0.86 to 0.50 V with the enhancement of bulk defect density in the absorber. The values of J sc from 53.55 to 39.91 mA cm −2 are observed for the bulk defect density in the range from 1 × 10 12 to 1 × 10 17 cm −3 .…”

Section: Resultsmentioning

confidence: 98%

“…As a result, a large built‐in electric potential is developed between the HTL and the absorber interface at the high acceptor density. [ 43,52,76 ]…”

Section: Resultsmentioning

confidence: 99%

“…This deteriorate in performances is due to the enhancement in the carrier recombination rate at the interface with increasing the defect density. [ 52,82,83 ] Thus, it is suggested that the defects at the ETL/absorber interface have significant role on the performance parameters of the photovoltaic devices. [ 43,50,80,84 ]…”

Section: Resultsmentioning

confidence: 99%

“…It is revealed that the performance parameters of the photovoltaic heterojunction structures are greatly affected by the defects at the ETL/absorber interface than at the absorber/HTL interface. [ 50,52 ] In this simulation work, the values of the defect density at both the CdS/Sb 2 Se 3 and Sb 2 Se 3 /SnS interfaces are set at 1 × 10 10 cm −2 to achieve the best power conversion efficiency.…”

Section: Resultsmentioning

confidence: 99%

“…It has been demonstrated that the hole transport from the absorber to back contact with low carrier recombination rate can be significantly enhanced by adding HTL between the absorber and the back metal contact. [ 43,51,52 ] In the previous studies, the inorganic tin sulfide (SnS) as a HTL has been applied to improve the performances of the photovoltaic devices. [ 53–55 ] Several advantages, such as nontoxicity, earth‐abundant, suitable energy bandgap, high absorption coefficient, high carrier mobility, and low cost, make the SnS as a promising candidate for the HTL in the thin‐film heterojunction solar cells.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

show abstract

Section: Resultsmentioning

confidence: 98%

“…As a result, a large built‐in electric potential is developed between the HTL and the absorber interface at the high acceptor density. [ 43,52,76 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

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This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 1017 cm−3 is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.

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Optimization of Cd-Free CZTSSe Kesterite Device with Different BSF Layers by SCAPS-1D

Et-taya¹,

Benami²

2023

Lecture Notes in Electrical Engineering

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Numerical simulation and performance optimization of Sb2S3 solar cell with a hole transport layer

Cited by 68 publications

References 37 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Optimization of Cd-Free CZTSSe Kesterite Device with Different BSF Layers by SCAPS-1D

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Numerical simulation and performance optimization of Sb2S3 solar cell with a hole transport layer

Cited by 68 publications

References 37 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Optimization of Cd-Free CZTSSe Kesterite Device with Different BSF Layers by SCAPS-1D

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Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation