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Hybrid organic-inorganic perovskite solar cells (PSCs) are the novel fourth-generation solar cells, with impressive progress in the last few years. MAPbI 3 is a cost-effective material used as an absorber layer in PSCs. Due to the different diffusion length of carriers, the electron transporting material (ETM) plays a vital role in PSCs' performance. ZnO ETM is a promising candidate for low-cost and high-efficiency photovoltaic technology. In this work, the normal n-i-p planar heterojunction structure has been simulated using SCAPS-1D. The influence of various parameters such as the defect density, the thickness of the MAPbI 3 layer, the temperature on fill factor, the open-circuit voltage, the short circuit current density, and the power conversion efficiency are investigated and discussed in detail. We found that a 21.42% efficiency can be obtained under a thickness of around 0.5 μm, and a total defect of 10 13 cm −3 at ambient temperature. These simulation results will help fabricate low-cost, high-efficiency, and low-temperature PSCs.

Third-generation thin-film solar cells based on CZTSSe are highly promising because of their excellent optoelectrical properties, earth-abundant, and non-toxicity of their constituent elements. In this work, the performance of CZTSSe-based solar cells with TiO2, CdS, and ZnSe as electron transporting materials (ETMs) was numerically investigated using the Solar Cell Capacitance Simulator (SCAPS). The effect of the active layer’s thickness and electron affinity, different buffer layers, and the contour plot of the operating temperature versus thickness of the CdS buffer layer were studied. The results show that the optimum power conversion efficiency for CdS, TiO2, and ZnSe, as the ETMs, is 23.16%, 23.13%, and 22.42%, respectively.

In the quest for a highly efficient and low-cost material for fourth-generation photovoltaic devices, organic-inorganic hybrid perovskite solar cells are gaining popularity as a new absorber. Currently, two types of solid-state perovskite device architecture are being researched. These are mesoporous and planar heterojunctions. Both structures are made up of five layers: transparent conductive oxide, electron transport material, perovskite active layer, hole transporting material, and back contact. In this work, the key characteristics of perovskite solar cells with zinc oxide (ZnO) and titanium dioxide (TiO2) as electron transport material are simulated using the one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D). TiO2 is the most commonly used material in perovskite solar cells, but its deposition requires high temperature, which limits the commercial processing of flexible devices. ZnO is widely used in the semiconductor industry and is considered an alternative to TiO2 due to its excellent electron transport. Simulation studies focus on the thickness, carrier diffusion length, and band gap energy of the absorber layer, which affect the photovoltaic properties of solar cell devices. The effect of working temperature is also examined. According to the findings, the use of ZnO as an electron transport material improves the cell efficiency compared to TiO2. Because of the lower edge of the conduction band, which facilitates the transport of photogenerated electrons in a perovskite solar cell, the best efficiency got from a structure using ZnO layer is 25.40 % at ambient temperature. The simulation results show that an absorber thickness of 500 nm is appropriate for achieving high efficiency.

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