Numerical simulation and global heat transfer computations of thermoelastic stress in Cz silicon crystal

Abstract

Global heat transfer computations were performed for the investigation of thermal stress in a Czochralski silicon crystal. The temperature distribution, thermal stress properties including maximum shear stress and von Mises stress distributions at two different axial crystal positions have been investigated with the help of heat transfer simulations. By analyzing the obtained results, the thermal stress maxima during the Czochralski growth process can be controlled by applying optimal crystal rotation of 8 rpm and counter crucible rotations of 5 and 15 rpm for a crystal position of 100 mm and 300 mm. This shows that by applying optimal crystal and counter crucible rotations throughout the growth process, the thermal stress maxima of a growing crystal can be reduced.

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

“…It easily affects the grain refinement and the grain boundary. [ 19 ] Figure shows the von Mises stress of the grown mc‐Si ingot for different solidification fractions. In Figure 3a, the modified HEB ingots have a maximum von Mises stress at the bottom center of the grown ingot due to thermal stress.…”