Czochralski (CZ) process modification with cooling tube in the response to market Global silicon shortage

Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth

“…These two hot and cold areas provided free energy for crystal growth. Because the main focus of this study was oxygen concentration, additional details about temperature distribution can be find in our previous study [ 21 ].

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“…The governing energy equation and naiver stocks equations applied to the CZ puller are [ [21] , [22] , [23] , [24] ]: …”

“…During transient simulation, the crystal front shape is determined using the moving mesh approach. In this method, the movement of each mesh is estimated at each time step using the movement due to temperature gradient difference and growth rate as shown below [ 21 , 25 ]: is the growth velocity due to temperature gradient difference in crystal and melt, which can be determined by the equation shown below [ 25 ]: in which denotes the solidification latent heat, and s and l denote solid and liquid phases, respectively, on the silicon.…”