Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Abstract

The present work is based on the numerical investigation of thermal stress and the dislocation density of the directional solidification (DS) grown multi‐crystalline silicon (mc‐Si) ingot. The heat exchanger block (HEB) plays the main role in the growth process, which decides the thermal stress and melt‐crystal interface of the mc‐Si ingot. The conventional furnace is modified to increase the quality of the mc‐Si ingot. The modification on the conventional furnace is done in the insulation block replaced by 1/3rd of the HEB. The HEB enhances the huge amount of heat extraction from the bottom of the crucible. The von Mises stress, dislocation density, and thermal gradient are analyzed. The thermal stress is reduced by the low thermal gradient influenced by the modified HEB. The modified HEB reduces the von Mises stress and dislocation density. The modified furnace system overcomes the conventional case ingot. The result shows that the modified furnace grown mc‐Si ingot improves the efficiency of the solar cell.

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

“…Bottom insulation wall opening. [31,33,38] The quasi-mono-crystalline silicon (Q-Si) ingot is grown in DS furnace by using c-Si as seeds. Figure 5 shows the schematic diagram of growth of Q-Si ingot.…”

“…Nitrogen is electrically inactive and the nitrogen related cluster enhances the dislocation density. [38,44,54]…”