Numerical analysis of sapphire crystal growth process using Ky and CZ method

Shin, H. K.; Im, Ji-Hyun; Im, Jong-In

doi:10.6111/jkcgct.2013.23.2.59

Journal of the Korean Crystal Growth and Crystal Technology

2013

DOI: 10.6111/jkcgct.2013.23.2.59

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Numerical analysis of sapphire crystal growth process using Ky and CZ method

H. K. Shin¹,

Ji-Hyun Im²,

Jong-In Im³

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Cited by 3 publications

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Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature

신호용¹,

홍수민²,

김종호³

et al. 2013

Journal of the Korean Crystal Growth and Crystal Technology

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Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal for LED application. In this study, the inductively-heated CZ growth processes for the sapphire crystal of 300 mm length have been analyzed numerically using finite element method. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The results show that the solid-liquid interface height decreased from about 80 mm at initial stage to 40 mm after mid-stage due to achieve the growth speed balance. Also the optimal input power of the modified system was similar with the original one due to the compensation effects of the crucible geometry and additional insulation. The crystal temperature grown by the modified CZ grower was increased about 10 K than the original one. Therefore the sapphire crystal of 300 mm height was grown successfully.

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Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature

신호용¹,

홍수민²,

김종호³

et al. 2013

Journal of the Korean Crystal Growth and Crystal Technology

View full text Add to dashboard Cite

show abstract

Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects

Shin¹,

Hong²,

Yoon³

et al. 2013

Journal of the Korean Crystal Growth and Crystal Technology

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In this study, a c-axis displacement and an internal stress of the sapphire crystal of 300 mm length have been analyzed numerically and the crystal length having no sub-grain defects have been predicted. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The simulation results show that the c-axis displacement difference between the original hot zone and others originated from the sub-grain defect formations in the sapphire ingot. When the crystal grown by CZ (Czochralski) grower using the modified hot zone, the crystal length having no sub-grain defects was increased about 57 mm maximum than the original one. When the simulation results compared with the experimental one, the predicted crystal length having no sub-grain defects were well corresponded with the experiment one in c-axis wafer of the 300 mm sapphire ingot. Therefore the sapphire crystal of 250 mm length having no sub-grain defects was successfully grown by CZ process.

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Process design for solution growth of SiC single crystal based on multiphysics modeling

Yoon¹,

Lee²,

Seo³

et al. 2016

Journal of the Korean Crystal Growth and Crystal Technology

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A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of 1600~1800 o C. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal. Key words

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Numerical analysis of sapphire crystal growth process using Ky and CZ method

Cited by 3 publications

References 8 publications

Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature

Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part I. Influence of hot zone structure modification on crystal temperature

Numerical analysis of CZ growth process for sapphire crystal of 300 mm length: Part II. Predictions of crystal growth length without sub-grain defects

Process design for solution growth of SiC single crystal based on multiphysics modeling

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