Process design for solution growth of SiC single crystal based on multiphysics modeling

Abstract

A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of 1600~1800 o C. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal. Key words