Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Boria, Vicente E.; Hestroffer, Karine; Budagosky, J. A.; Cros, A.; Bougerol, Catherine; Renevier, H.; Daudin, B.

doi:10.1016/j.jcrysgro.2011.08.015

Cited by 48 publications

(51 citation statements)

References 21 publications

(32 reference statements)

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“…It should be noted that the initial increase in the NW mean growth rate is more significant than the increase reported in Ref. 25: this may be due to the critical increase in the incubation time with the growth temperature, which could lead to an overestimation of the NW mean growth rate at low growth temperatures. The occurrence of a maximum NW mean growth rate for intermediate growth temperatures is of high interest for technological applications in which the highest NW mean growth rate is required.…”

Section: Effects Of the Growth Temperaturementioning

confidence: 66%

“…Similarly to the catalyst-induced approach, it has been suggested for the self-induced approach that the direct impinging flux on the NW top facet as well as the adatom surface diffusion on the substrate and along the NW vertical sidewalls are involved. 14,15,[19][20][21][22][23][24][25] Furthermore, the geometrical characteristics in the MBE chamber also play a significant role because the gallium and nitrogen fluxes directly depend on the angles of the effusion cell and plasma source with respect to the substrate. 26,27 However, the ratio between the incorporation rates on the NW top facet and on its vertical sidewalls as well as a detailed understanding of the diffusion mechanisms are still open questions.…”

Section: Introductionmentioning

confidence: 99%

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Quantitative description for the growth rate of self-induced GaN nanowires

et al. 2012

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Section: Effects Of the Growth Temperaturementioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Quantitative description for the growth rate of self-induced GaN nanowires

et al. 2012

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“…The redshift in wavelength might be attributed to higher InN molar fractions in the NMs. Recent studies have shown that the growth of GaN nanostructures is highly dependent on two factors: the temperature and surface diffusion kinetics [7,8]. A hypothesis to explain the growth of the NMs is that a local modification to the substrate surface prior to growth may have influenced the local surface diffusion kinetics of the Ga and In adatoms, resulting in nanostructures with different shapes and compositions.…”

Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy-Grown InGaN Nanomushrooms and Nanowires for White Light Source Applications

Gasim

et al. 2012

Conference on Lasers and Electro-Optics 2012

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Abstract:We report the observation of coexisting InGaN nanomushrooms and nanowires grown via MBE. Photoluminescence characterization shows that the nanostructures emit yellow and blue light, respectively. The combined emission is promising for white-LEDs. Introduction:The development of solid-state lighting is largely dependent on the fabrication of InGaN-based LEDs [1,2]. However, the lack of a native substrate, which results in a high epitaxy defect density, has caused InGaN-based devices to suffer from efficiency droop at high drive currents. Recently, it has been demonstrated that InGaN nanowires (NWs) grown on a foreign substrate do not suffer from the lattice mismatch, allowing for the growth of high crystalline quality structures [3]. This ushered in intense research on InGaN NWs for solid-state lighting applications [4,5]. In this study, we report on the first observation of the coexistence of wurtzite InGaN NWs and nanomushrooms (NMs) grown on a silicon substrate using plasma-assisted molecular beam epitaxy (MBE). The NMs are comprised of a slender nanowire body and a wider flat hexagonal cap. To the best of our knowledge, this is the first observation of such nanostructures.

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“…Details of the growth are given elsewhere [11,12]. A Si effusion cell was used for n-type doping, performed by exposing GaN NWs to the Si flux [5].…”

Section: Samples and Experimentsmentioning

confidence: 99%

Phonon–plasmon coupling in Si doped GaN nanowires

Rozas

Cros

Murcia‐Mascarós

et al. 2016

Materials Science in Semiconductor Processing

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The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon-plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A 1 (LO) mode for all samples. This behavior points to phonon-plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.

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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Cited by 48 publications

References 21 publications

Quantitative description for the growth rate of self-induced GaN nanowires

Quantitative description for the growth rate of self-induced GaN nanowires

Molecular Beam Epitaxy-Grown InGaN Nanomushrooms and Nanowires for White Light Source Applications

Phonon–plasmon coupling in Si doped GaN nanowires

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