Novel type-II material system for laser applications in the near-infrared regime

Abstract

The design and experimental realization of a type-II “W”-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory–experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

“…A comparison of experimental and theoretical photoluminescence spectra obtained from a fully microscopic theory yielded an excellent agreement. Furthermore, material gain values similar to those of type-I heterostructures were predicted 17 . In order to confirm the results obtained from theoretical modeling and to analyze the energy states that are involved in the optical transitions in these “W”-QWHs, photomodulated reflectance spectroscopy was employed.…”

“…in Ref. 17 , which was previously applied to various type-I 23 as well as type-II 24 materials systems. Only nominal material parameters such as QW thicknesses and compositions are required as input for this approach.…”

Optically pumped VECSELs: review of technology and progress

“…>8 W at 1.04 µm [110], >7 W at 1.18 µm [111] and >4.5 W at 1.25 µm [112]. On the other hand, GaInSb suffers from low confinement of carriers (holes) [113], though this issue has recently been mitigated by employing type-II GaInAs/GaAsSb QWs for emission at 1.2 µm [114].…”

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

“…[5] Very recently, the (Ga,In)As/Ga(As,Sb) material system has been used to make verticalexternal-cavity surface emitting lasers emitting light at 1.2 µm using the type-II band alignment. [6,7,8] To further improve these devices profound knowledge about the basic properties and processes happening in these materials are needed. Especially the recombination dynamics of this type-II system is an important issue and need to be studied carefully.…”